We have prepared thin-film CdS/CdTe cells with CdTe thickness from 0.25 mu m to 2.1 mu m on commercial SnO2:F-coated soda-lime glass with a high resistivity transparent SnO2 buffer layer. With careful optimization of the magnetron sputtering conditions, CdS and Cu thicknesses, CdCl2 activation, and back-contact diffusion processes, we obtain 8% efficiency with only 0.25 mu m of CdTe and 11% efficiency with 0.5 mu m. The results confirm the advantages of magnetron sputtering for ultra-thin CdTe and show some light trapping and excellent carrier collection even for the thinnest devices. Published by Elsevier B.V.