R.F. sputter deposition of Sb doped CdTe thin films was carried out with targets containing different amounts of antimony (C-T: 0, 2.5, 10 and 20 at.%). The substrates were kept at different temperatures (T-s) of 200, 275, 350 and 450 degrees C. Three different argon pressure values: 2.5, 5 and 15 mTorr were used. The lowest dark resistivity (rho) at room temperature (RT) was 9.0 x 10(5) Omega CM, which is one of the lowest values reported in the literature for Sb doped CdTe. Highly transparent ( similar to 90%) and conductive (rho = 3.7 x 10(-40) cm) F doped CdO (n-type) thin films, prepared at room temperature by the sol-gel method, were employed as window and top-contact. The configuration of the fabricated solar cell was (Au-Cu)/p-CdTe/n-CdO/glass. Open-circuit voltage (V-oc) and short-circuit current density (J(sc)) at room temperature have the highest values for high T-s, low P-g and C-T = 10 at.%. Despite the fact that V-oc and J(sc) are lower than those reported in the literature, we think this work is useful as a basis for the search of more competitive CdTe/ CdO based PV devices, (c) 2005 Elsevier Ltd. All rights reserved.