CuIn(1-x)GaxSe2 (CIGS) thin films were prepared by one-step electro-deposition technique from a salt bath coupled with thiocyanate complex electrolytes followed by annealing in argon atmosphere at 300 degrees C. The influence of deposition reduction potentials as well as the salt concentrations on the structure, morphology, composition and the optical properties were performed. A reproducible Cu-In-Ga-Se precursor layer deposition with consistent composition control was demonstrated. The as-deposited films exhibit an amorphous behavior; however the films displayed good crystallization after annealing. The films show very uniform and dense grain formation with platelet-like nanostructures. The optical properties of the films are modified due to annealing. The electrical conductivity measurements demonstrate that the transport mechanism is influenced by three different temperature regions: the ionization, extrinsic and intrinsic regions, respectively, as found in other semiconductors. However, the annealed films display downturn in conductivity at low temperature indicating that there may be trapping at localized sites or scattering of the free carriers, which may be attributed to the over growth and defect sites. The electro-deposition technique demonstrates promise of growing high-quality CIGS thin films. (C) 2010 Elsevier Ltd. All rights reserved.