We have investigated the optimization of the sputtered metal back contact coupled with the B-doped zinc oxide (ZnO:B) back reflector for 1.43 m(2) p-i-n type hydrogenated amorphous silicon (a-Si:H) single-junction photovoltaic modules. The module with the A1 back contact leads to the high stabilized aperture-area efficiency (eta ApER) of 7.3% with the low light-induced degradation ratio of 12.6% despite low initial eta APER of 8.3%. However, the insertion of Ag causes a severe light-induced degradation. Through the further optimization, the stabilized maximum power of 100.2 W is achieved. This is corresponding to stabilized eta ApER of 7.4%, which is the highest value for the certified industrial products of 1.43 m2 a-Si:H single-junction photovoltaic modules. (C) 2014 Elsevier Ltd. All rights reserved.