Lutetium oxide films (Lu2O3) of different thicknesses (d=47-546 nm) were prepared by physical vapor deposition method with an electron-beam gun. The dielectric properties of Lu2O3 films were examined in metal/insulator/metal-type structures. The influence of the temperature (T=300-500 K) and the frequency (f=0.1 mHz-3 MHz) on dielectric properties was examined. At room temperature, the structures exhibited high capacitance density of 0.2-2 fF/mu m(2). Thick, as-deposited, films were characterized by the dielectric permittivity of 12.9, whereas for films thermally annealed the permittivity was 11.1. For films thinner than 120 nm the permittivity decreased down to kappa=9.6. This effect was caused by thin near-electrode layers at both metal/insulator boundaries. Effective capacitance of these two near-electrode regions was 20.7 fF/mu m(2), as determined from the capacitance-temperature characteristics. (C) 2012 Elsevier B.V. All rights reserved.