Thin Solid Films, Vol.525, 45-48, 2012
Effects of electric-field-induced piezoelectric strain on the electronic transport properties of La0.9Ce0.1MnO3 thin films
The authors constructed multiferroic structures by growing La0.9Ce0.1MnO3 (LCEMO) thin films on piezoelectric 0.68Pb(Mg1/3Nb2/3)O-3-0.32PbTiO(3) (PMN-PT) single-crystal substrates. Due to the efficient elastic coupling at the interface, the electric-field-induced piezoelectric strain in PMN-PT substrates is effectively transferred to LCEMO films and thus, leads to a decrease in the resistance and an increase in the magnetoresistance of the films. Particularly, it was found that the resistance-strain coefficient [(Delta R/R)(film)/(Delta epsilon(zz))(film)] of the LCEMO film was considerably enhanced by the application of magnetic fields, demonstrating strong coupling between the lattice and the spin degrees of freedom. (Delta R/R)(film)/(Delta epsilon(zz))(film) at 122 K was enhanced by similar to 28.8% by a magnetic field of 1.2 T. An analysis of the overall results demonstrates that the phase separation is crucial to understand strain-mediated modulation of electronic transport properties of manganite film/PMN-PT multiferroic structures. (C) 2012 Elsevier B.V. All rights reserved.