CuInS2 films are promising for future solar cell technology. However, the formation of the CuS phase during the growth of CuInS2 thin films may hinder the performance of the CuInS2-based solar cell. Therefore, the removal of the excessive CuS phase is required during fabrication of CuInS2 films. In this research, we fabricated a CuInS2 film using Cu-In electrodeposition and a sulfurization process. Electrodeposition tests were conducted in solutions of various pH values and deposition voltages to grow high-quality precursor films. Moreover, to suppress formation of the CuS phases, heat treatment was incorporated in the fabrication process. We found that an appropriate amount of sulfur powder and a suitable heat treatment temperature could suppress the CuS phases and form well-crystallized CuInS2. Improvements in film quality and removal of the CuS phase can be confirmed by X-ray diffraction scanning electron microscope imaging, and energy dispersive spectrometer measurements. High-quality film with superior crystalline structure and surface morphology was formed with sulfurization and heat treatment at 600 degrees C. (C) 2012 Elsevier B.V. All rights reserved.