P-type copper(I) thiocyanate (beta-CuSCN) was deposited using a pneumatic micro-spray gun from a saturated solution in propyl sulphide. An as-produced 6 mu m CuSCN film exhibited a hole mobility of 70 cm (2)/V.s and conductivity of 0.02 S.m(-1). A zinc oxide (ZnO) nanorod array was filled with CuSCN, demonstrating the capability of the process for filling nanostructured materials. This produced a diode with a n-type ZnO and p-type CuSCN junction. The best performing diodes exhibited rectifications of 3550 at +/- 3 V. The electronic characteristics exhibited by the diode were attributed to a compact grain structure of the beta-CuSCN giving increased carrier mobility and an absence of cracks preventing electrical shorts between electrode contacts that are typically associated with beta-CuSCN films. (C) 2013 Elsevier B. V. All rights reserved.