We exploited an aqueous solution deposition technique to fabricate N-type ZnO and Al-doped ZnO (AZO) films with environmentally benign process at a very low temperature. ZnO, Zn, and Al were used in this study, instead of Zn(CH3COO)(2), Al(NO3)(3), and AlCl3 employed in previous investigations. Furthermore, the processing temperature was about 80 degrees C which was lower than those of other fabrication techniques. The experimental results demonstrated that the resistivity of pristine ZnO and AZO films without any post-growth thermal annealing can be as low as similar to 2.0 x 10(-2) Omega cm and similar to 8.4 x 10(-3) Omega cm, respectively, and the transmittances were approximately 90% and 85%, respectively. (C) 2013 Elsevier B. V. All rights reserved.