Bismuth selenide (Bi2Se3) thin films were grown on SrTiO3(111) (STO) substrates using pulsed laser deposition (PLD). The structural, morphological, electrical, and transport properties were studied at various substrate temperatures (T-S) from 120 to 350 degrees C. Amorphous films grown at T-S < 180 degrees C exhibited semiconducting behavior, and highly c-axis-oriented textured films deposited at T-S >= 180 degrees C exhibited metallic behavior. Bi2Se3 thin-films were epitaxially grown on STO substrates at 300 and 350 degrees C. Thickness-dependent characteristics were also investigated for optimized Bi2Se3 films deposited at T-S = 230 degrees C. The semiconducting or metallic characteristics of Bi2Se3 films prepared using PLD were observed through electrical and transport results. (C) 2013 Elsevier B. V. All rights reserved.