화학공학소재연구정보센터
Thin Solid Films, Vol.535, 14-17, 2013
Selenisation of sequentially electrodeposited Cu-Zn and Sn precursor layers
Cu2ZnSnSe4 (CZTSe) thin films were produced through the selenisation of sequentially electrodeposited Cu-Zn and Sn stacked films. The micro-structural and compositional properties of the precursor stacked and selenised films were characterised using scanning electron microscopy/energy dispersive spectroscopy, X-ray diffraction and Raman spectroscopy. The electrodeposited Cu-Zn layers had a high concentration of zinc to compensate for the loss of zinc that occurred during the following deposition of the tin layer. It was observed that a Cu/Zn ratio equal to 1.1 in the electrodeposited Cu-Zn layers is optimal and provides the desired ratio of all themetallic components in selenised CZTSe films. Selenisation for 60 min resulted in highly crystalline CZTSe films with a grain size of 1.5-4 mu m. In addition, the influence of the Cu-Zn ratio in the electrodeposited stacked layers on the morphology and the elemental and phase compositions of the CZTSe films was investigated. (C) 2013 Elsevier B.V. All rights reserved.