Na delta-doped p-type ZnO thin films were fabricated on quartz substrates with the structure of ZnO/Na (delta-layer) multi-layers by pulsed laser deposition. NaF ceramic target was used as Na source. The effects of oxygen pressure and substrate temperature on the electrical properties of Na delta-doped ZnO thin films are discussed. An optimized result with a resistivity of 29.8 Omega . cm, Hall mobility of 0.263 cm(2)/V . s, and hole concentration of 7.9 x 10(17) cm(-3) is achieved, and electrically stable over several months. The present work is of interest for developing a method to realize p-type ZnO thin films doping with Na. (C) 2013 Elsevier B.V. All rights reserved.