The transmittance at the wavelength (lambda) of 580-770 nm greatly changes when the semiconducting VO2 phase transforms to the metal phase in TiO2/VO2 films grown on (0001) SiO2 substrate. The similar to 180 nm TiO2 layer as the antireflective coating enhances the transmittance of semiconducting VO2 film to similar to 48% at lambda = 630 nm at 20 degrees C. When the temperature rises to 85 degrees C, the evolution of refractive index (n and k) of VO2 film allows a largely enhanced reflectivity and absorptance, which decreases the transmittance of metal VO2 film to similar to 30% at lambda = 630 nm. The similar to 18% transmittance change with the phase transition is much higher than that in single VO2 film and is helpful to design high-resolution infrared detectors at room temperature. (C) 2013 Elsevier B.V. All rights reserved.