A comparative study of etch characteristics of the InGaZnO4 (IGZO) films has been performed in chlorine-(Cl-2 and BCl3) and fluorine-based (CF4 and SF6) inductively coupled plasmas (ICPs). Higher IGZO etch rates were achieved with chlorine-based discharges due to the higher volatility of metal chloride etch products. The IGZO etch rate was significantly affected by ICP source power and rf chuck power, and maximum etch rates of similar to 1200 mu/min and similar to 1350 angstrom/min were obtained in fluorine-based and Cl-2/Ar discharges, respectively. The etched surface morphologies of IGZO in 10BCl(3)/5Ar mixtures were better than the unetched control sample. Maximum etch selectivities of 1.4: 1 for IGZO over HfO2, 3.1: 1 for IGZO over Al2O3, and 1.2: 1 for IGZO over yttria-stabilized zirconia were obtained. (C) 2013 Elsevier B.V. All rights reserved.