Precursor films based on poly(vinylidene fluoride-trifluoroethylene) P(VDF-TrFE) and P(VDF-TrFE) blended with Pb(Zr, Ti)O-3 were spin-coated on Si-substrates and subsequently annealed at 170 degrees C. X-ray diffraction studies showed that the amorphous precursor films crystallize to the.-phase P(VDF-TrFE) without involving the formation of other polymorphs when the P(VDF-TrFE) is blended with Pb(Zr, Ti)O-3, resulting in phase mixtures composed of a crystalline gamma-phase P(VDF-TrFE) and an amorphous Pb(Zr, Ti)O-3. A larger memory window width and higher accumulation capacitance, as well as a lower leakage current density are induced by the blended Pb(Zr, Ti)O-3 within the low operating voltage ranges from -3.0 to 3.0 V and from -2.0 to 2.0 V for 20 wt% and 40 wt% Pb(Zr, Ti)O-3 blending, respectively. These improvements not only in the hysteretic capacitance-voltage characteristics but also in the leakage current density-electric field are directly correlated with the phase mixtures, their volume fraction, dipole moments, and formation of interface layer between the blended film and Si substrate. (C) 2013 Elsevier B.V. All rights reserved.