The crack-healing behavior of SiN/SiC nanolaminated thin films in a high-temperature environment was investigated. Laminated films with a thickness of 1 mu m were fabricated on a silicon substrate by ion-beam-assisted deposition. The number of layers was fixed to four, and the bilayer ratio of SiN to SiC was set to either 1 or 3. Cracked samples were heated in an air atmosphere at 600-1200 degrees C. In the case of the SiN/SiC nanolaminated film, the crack was perfectly filled with the oxide by heating at 1000 degrees C, whereas the crack of the SiN film was not healed. Moreover, the filled crack length of the SiN/SiC laminated film with a bilayer ratio of 1 was longer than that of the same type of film with a bilayer ratio of 3. These results suggest that inserting SiC layers in SiN films may confer crack-healing ability to SiN thin films. Moreover, the influence of heating on crack-healing was investigated systematically. Crack-healing was improved with increasing heating temperature and time. (C) 2014 Elsevier B. V. All rights reserved.