We demonstrate Fe3Si/Ge/Fe3Si/GaAs(001) structures grown by molecular- beam epitaxy and characterized by transmission electron microscopy, electron backscattered diffraction, and X-ray diffraction. The bottom Fe3Si epitaxial film on GaAs is always single crystalline. The structural properties of the Ge film and the top Fe3Si layer depend on the substrate temperature during Ge deposition. Different orientation distributions of the grains in the Ge and the upper Fe3Si film were found. The low substrate temperature T-s of 150 degrees C during Ge deposition ensures sharp interfaces, however, results in predominantly amorphous films. We find that the intermediate T-s (225 degrees C) leads to a largely [111] oriented upper Fe3Si layer and polycrystal films. The high T-s of 325 degrees C stabilizes the [001] oriented epitaxial layer structure, i.e., delivers smooth interfaces and single crystal films over as much as 80% of the surface area. (C) 2014 Elsevier B.V. All rights reserved.