The disilane (Si2H6) + germane (GeH4) chemistry has been evaluated for the reduced pressure (2660 Pa, i.e. 20 Torr), low temperature growth of intrinsic and heavily boron-doped SiGe. A SiGe growth rate "plateau" has been evidenced between 650 degrees C and 750 degrees C. Meanwhile, the Ge concentration x was rather steady in the 500 degrees C-700 degrees C range. A linear increase of the SiGe growth rate with the GeH4 flow occurred at 500 degrees C, 550 degrees C and 675 degrees C. The increase of x with the GeH4 mass-flow otherwise changed from linear to sub-linear as the growth temperature was reduced from 675 degrees C down to 500 degrees C-550 degrees C. Be it with Si2H6 or SiH4, the SiGe growth rate fell by a factor of similar to 7-8 when switching from 550 degrees C to 500 degrees C. For the same x, growth rate was nevertheless 3-9 times higher with Si2H6 than with SiH4. We have also studied the impact of B2H6 on the 500 degrees C growth kinetics of SiGe with Si2H6. Large substitutional boron concentrations were obtained in single-crystalline SiGe:B layers: [B](subst.) similar to 3.7 x 10(20) cm(-3). Surface B atoms otherwise catalysed H desorption, resulting in growth rates similar to 5 times higher for SiGe: B than for intrinsic SiGe. Finally, a monotonic decrease of the SiGe(:B) growth rate together with a significant increase of the Ge concentration were evidenced at 500 degrees C and 675 degrees C when adding HCl to the gaseous mixture. At 500 degrees C, SiGe:B growth rates still stayed 3 times higher than the intrinsic SiGe ones. Adding HCl had otherwise no clear impact on [B](subst.) (C) 2013 Elsevier B. V. All rights reserved.