화학공학소재연구정보센터
Thin Solid Films, Vol.558, 75-85, 2014
Rethinking of the silicon nanowire growth mechanism during thermal evaporation of Si-containing powders
Silicon (Si) nanoparticles that are precipitated through the disproportionation of SiO have been regarded as the seeds to the growth of Si nanowires during thermal evaporation of Si-containing powders in quartz or alumina tube without any supply of metallic catalyst. However, compositional scrutiny of the quartz tube after high temperature dwelling reveals traces of metallic aluminum and copper, which are perfect catalysts for Si nanowire seeding and growth. With all due respect, this study prompts rethinking of the seeding and growth mechanism of Si nanowires grown via thermal evaporation of Si-containing powders. (C) 2014 Elsevier B.V. All rights reserved.