Boron-doped zinc oxide filmswere fabricated bymetal-organic chemical vapor deposition at deposition temperatures (T-d) from150 to 210 degrees C. The deposition rate increases abruptly andmonotonically with increasing T-d. The resistivity also varies drastically, and a minimum resistivity of 1.6 x 10(-3)Omega cm is obtained at T-d = 175 degrees C. The crystal orientation and surface texture show T-d dependence. These characteristics correlate with each other. The dependence of these characteristics on T-d is caused by the reactivity of the source materials. (C) 2013 Elsevier B.V. All rights reserved.