The EuInZnO (EIZO) thin film transistor (TFT) devices were fabricated by the sol-gel spin-coating technique. The EIZO TFT operates in the n-channel depletion mode and exhibits a well-defined pinch-off and saturation region. Because europium ion possesses lower electronegativity (1.2) and standard electrode potential (-1.991 V), it can act as the carrier suppressor to reduce the carrier concentrations of the IZO (In:Zn = 1:1) thin film. Eu3+ (13 mol%)-doped IZO TFT possesses the optimum performance, and its field-effect mobility in the saturated regime, threshold voltage, on-off ratio, and S-factor are 1.23 cm(2)/Vs, 3.28 V, 1.07 x 10(6), and 2.28 V/decade, respectively. (C) 2014 Elsevier B.V. All rights reserved.