The inductively coupled plasma-enhanced atomic layer deposition (PEALD) method was used to fabricate ultrathin and smooth Pt thin films at low temperatures without the use of a Pt seed layer. The Pt thin metal films deposited at 200 degrees C onto Si and glass substrates exhibited high conductivities (<12 mu Omega cm for films with a thickness greater than 8 nm) and thermal stabilities resembling those of the bulk material. The measured density of the deposited Pt thin films was 20.7 +/- 6 g/cm(3). X-ray photoelectron spectra of the films showed clear 4f peaks (74.3 eV (4f(5/2)) and 71.1 eV (4f(7/2))), and X-ray diffraction measurements showed the (111) peak of the fcc structure. The deposited Pt layers were in crystal form. The 25.5-nm Pt films coated onto 170-nm-wide trench structures (aspect ratio of 3.5:1) exhibited good step coverage. The PEALD-deposited Pt thin films were chemically stable under high-temperature light illumination and could serve as catalysts under strongly alkaline conditions (pH = 12) during the long-term oxidization of ammonium ions. (C) 2014 Elsevier B.V. All rights reserved.