투명한 p형 반도체 CuAlO2 박막의 일산화질소 가스 감지 특성

박수정; 김효진; 김도진; Soo-Jeong Park; Hyojin Kim; Dojin Kim

Korean Journal of Materials Research, Vol.23, No.9, 477-482, September, 2013

DOI10.3740/MRSK.2013.23.9.477 Export Citation

투명한 p형 반도체 CuAlO2 박막의 일산화질소 가스 감지 특성

Nitrogen Monoxide Gas Sensing Characteristics of Transparent p-type Semiconductor CuAlO2 Thin Films

박수정¹, 김효진 ^{1, 2, †}, 김도진 ^{1, 2}

¹충남대학교 차세대전자기판회로학과
²충남대학교 공과대학 재료공학과

Soo-Jeong Park¹, Hyojin Kim^{1, 2, †}, and Dojin Kim^{1, 2}

¹Graduate School of Advanced Electronic Circuit Substrate Engineering, Chungnam National University, Daejeon 305-764, Korea
²Department of Materials Science and Engineering, Chungnam National University, Deajeon 305-764, Korea

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We investigated the detection properties of nitrogen monoxide (NO) gas using transparent p-type CuAlO2 thin film gas sensors. The CuAlO2 film was fabricated on an indium tin oxide (ITO)/glass substrate by pulsed laser deposition (PLD), and then the transparent p-type CuAlO2 active layer was formed by annealing. Structural and optical characterizations revealed that the transparent p-type CuAlO2 layer with a thickness of around 200 nm had a non-crystalline structure, showing a quite flat surface and a high transparency above 65 % in the range of visible light. From the NO gas sensing measurements, it was found that the transparent p-type CuAlO2 thin film gas sensors exhibited the maximum sensitivity to NO gas in dry air at an operating temperature of 180 oC. We also found that these CuAlO2 thin film gas sensors showed reversible and reliable electrical resistance-response to NO gas in the operating temperature range. These results indicate that the transparent p-type semiconductor CuAlO2 thin films are very promising for application as sensing materials for gas sensors, in particular, various types of transparent p-n junction gas sensors. Also, these transparent p-type semiconductor CuAlO2 thin films could be combined with an n-type oxide semiconductor to fabricate p-n heterojunction oxide semiconductor gas sensors.

Keywords:oxide gas sensor;copper aluminum oxide;NO gas;transparent oxide

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[Related Articles]

[1] Yamazoe N, Miura N, Sens. Actuators B, 20, 95 (1994)

[2] Sauter D, Weimar U, Noetzel G, Mitrovics J, Gopel W, Sens. Actuators B, 69, 1 (2000)

[3] Min Y, Tuller HL, Palzer S, Wollenstein J, Bottner H, Sens. Actuators B, 93, 435 (2003)

[4] Gao T, Wang TH, Appl. Phys. A, 80, 1451 (2005)

[5] Kawazoe H, Yasukawa M, Hyodo H, Kurita M, Yanagi H, Hosono H, Nature, 389(6654), 939 (1997)

[6] Li D, Fang XD, Dong WW, Deng ZH, Tao RH, Zhou S, Wang JM, Wang T, Zhoo YP, Zhu XB, J. Phys. D, 42, 055009 (2009)

[7] Park K, Ho KY, Kwon HC, Nahm S, J. Alloys Comp., 437, 1 (2007)

[8] Yanagi H, Inoue S, Ueda K, Kawazoe H, Hosona H, Hamada N, J. Appl. Phys., 88, 4159 (2000)

[9] Ohta H, Kawamura KI, Orita M, Hirano M, Sarukura N, Hosono H, Appl. Phys. Lett., 77, 475 (2000)

[10] Ruiz Am, Sakai G, Cornet A, Shimanoe K, Morante JR, Yamazoe N, Sens. Actuators B, 93, 509 (2003)

[11] Li Y, Wlodarski W, Galatsia K, Moslih SH, Cole J, Russo S, Rockelmann N, Sens. Actuators B, 83, 160 (2002)

[12] Hotovy I, Rehacek V, Siciliano P, Capone S, Spiess L, Thin Solid Films, 418(1), 9 (2002)

[13] Zhou S, Fang XD, Deng ZH, Li D, Dong WW, Tao RH, Meng G, Wang T, Sens. Actuators B, 143, 119 (2009)

[14] Zheng XG, Taniguchi K, Takahashi A, Liu Y, Xu CN, Appl. Phys. Lett., 85, 1728 (2004)

[15] Morgan DV, Aliyu YH, Bunce RW, Salehi A, Thin Solid Films, 312(1-2), 268 (1998)

[16] Solis JL, Lantto V, Sens. Actuators B, 48, 322 (1998)

[17] Scott RWJ, Yang SM, Chabanis G, Coombs N, Williams DE, Ozin GA, Adv. Mater., 13(19), 1468 (2001)

[18] Naisbitt SC, Pratt KFE, Williams DE, Parkin IP, Sens. Actuators B, 114, 969 (2006)

[19] Ahlers S, Muller G, Doll T, American Scientific Publishers, Encyclopedia of Sensors, p. 413, ed. by C. A. Grimes, E. C. Dickey and M. V. Pishko (2006)