화학공학소재연구정보센터
홈 로그인 로그아웃 연락처 사이트맵
Korean Journal of Materials Research, Vol.21, No.2, 120-124, February, 2011
DOI10.3740/MRSK.2011.21.2.120  Export Citation
실리콘 이종 접합 태양 전지 특성에 대한 ZnO:Al과 비정질 실리콘 계면 반응의 영향
Effect of Interface Reaction between ZnO:Al and Amorphous Silicon on Silicon Heterojunction Solar Cells
강민구1, 탁성주1, 이종한1, 김찬석1, 2, 정대영2, 이정철2, 윤경훈2, 김동환1, †
  • 1고려대학교 신소재공학과
  • 2한국에너지기술연구원 태양광연구단
Min Gu Kang1, Sung Ju Tark1, Jonghan Lee1, Chan Seok Kim1, 2, DaeYoung Jung3, Jung Chul Lee3, Kyung Hoon Yoon3, and Donghwan Kim1, †
  • 1Department of Materials Science and Engineering, Korea University, Korea
  • 2Photovoltaic Research Center, Korea Institute of Energy Research
  • 3Photovoltaic Research Center, Korea Institute of Energy Research, Korea
E-mail:
Silicon heterojunction solar cells have been studied by many research groups. In this work, silicon heterojunction solar cells having a simple structure of Ag/ZnO:Al/n type a-Si:H/p type c-Si/Al were fabricated. Samples were fabricated to investigate the effect of transparent conductive oxide growth conditions on the interface between ZnO:Al layer and a-Si:H layer. One sample was deposited by ZnO:Al at low working pressure. The other sample was deposited by ZnO:Al at alternating high working pressure and low working pressure. Electrical properties and chemical properties were investigated by light I-V characteristics and AES method, respectively. The light I-V characteristics showed better efficiency on sample deposited by ZnO:Al by alternating high working pressure and low working pressure. Atomic concentrations and relative oxidation states of Si, O, and Zn were analyzed by AES method. For poor efficiency samples, Si was diffused into ZnO:Al layer and O was diffused at the interface of ZnO:Al and Si. Differentiated O KLL spectra, Zn LMM spectra, and Si KLL spectra were used for interface reaction and oxidation state. According to AES spectra, sample deposited by high working pressure was effective at reducing the interface reaction and the Si diffusion. Consequently, the efficiency was improved by suppressing the SiOx formation at the interface.
Keywords:silicon heterojunction solar cell;interface reaction;amorphous silicon;ZnO
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