RF Magnetron Sputtering에 의한 BiFeO3 박막의 제조 및 전기적 특성

박상식; Sang Shik Park

Korean Journal of Materials Research, Vol.19, No.5, 253-258, May, 2009

DOI10.3740/MRSK.2009.19.5.253 Export Citation

RF Magnetron Sputtering에 의한 BiFeO3 박막의 제조 및 전기적 특성

Preparation and Electrical Properties of BiFeO3 Films by RF Magnetron Sputtering

박상식^†

경북대학교 나노소재공학부

Sang Shik Park^†

School of Nano & Materials Engineering, Kyungpook National University, Sangju, Kyungpook, 742-711, Korea

E-mail:

Mn-substituted BiFeO3(BFO) thin films were prepared by r.f. magnetron sputtering under an Ar/O2 mixture of various deposition pressures at room temperature. The effects of the deposition pressure and annealing temperature on the crystallization and electrical properties of BFO films were investigated. X-ray diffraction patterns revealed that BFO films were crystallized for films annealed above 500 oC. BFO films annealed at 550 oC for 5 min in N2 atmosphere exhibited the crystallized perovskite phase. The (Fe+Mn)/Bi ratio decreased with an increase in the deposition pressure due to the difference of sputtering yield. The grain size and surface roughness of films increased with an increase in the deposition pressure. The dielectric constant of BFO films prepared at various conditions shows 127~187 at 1 kHz. The leakage current density of BFO films annealed at 500 oC was approximately two orders of magnitude lower than that of 550 oC. The leakage current density of the BFO films deposited at 10~30 m Torr was about 5×10-6~3×10-2 A/cm2 at 100 kV/cm. Due to the high leakage current, saturated P-E curves were not obtained in BFO films. BFO film annealed at 500 oC exhibited remnant polarization(2Pr) of 26.4 μC/cm2 at 470 kV/cm.

Keywords:BiFeO3;r.f. sputtering;multiferroic film;leakage current

[References]

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Lee CC, Wu JM, Appl. Surf. Sci., 253(17), 7069 (2007)
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[Referenced By]

[1] Dho J, Leung CW, MacManus-Driscoll JL, Blamire MG, J. Cryst. Growth, 267(3-4), 548 (2004)

[2] Zhu WM, Ye ZG, Ceram. Int., 30, 1435 (2004)

[3] Wang J, Neaton JB, Zheng H, Nagarajan V, Ogale SB, Liu B, Viehland D, Vaithyanathan V, Schlom DG, Wagmare UV, Spaldin NA, Rabe KM, Wuttig M, Ramesh R, Science, 299, 1719 (2003)

[4] Kimura T, Goto T, Shintani H, Ishizaka K, Arima T, Tokura Y, Nature, 426, 55 (2003)

[5] Kubel F, Schmid H, Acta Crystallogr. B, 46, 698 (1990)

[6] Moreau JM, Michel C, Gerson R, James WJ, J. Phys. Chem. Sol., 32, 1315 (1971)

[7] Eerenstein W, Morison FD, Dho J, Blamire MG, Scott JF, Mathur ND, Science, 307, 1203 (2005)

[8] Uchida H, Ueno R, Nakaki H, Funakubo H, Koda S, Jpn. J. Appl. Phys., 44, L561 (2005)

[9] Chung CF, Wu JM, Electrochem. Solid State Lett., 8(12), F63 (2005)

[10] Bea H, Bibes M, Barthelemy A, Bouzehouane K, Jacquet E, Khodan A, Contour JP, Fusil S, Wyczisk F, Forget A, Lebeugle D, Colson D, Viret M, Appl. Phys. Lett., 87, 072508 (2005)

[11] Tian W, Vaithyanathan V, Schlom DG, Zhan Q, Yang SY, Chu YH, Ramesh R, Appl. Phys. Lett., 90, 172908 (2007)

[12] Lee CC, Wu JM, Appl. Surf. Sci., 253(17), 7069 (2007)

[13] Wang YP, Zhou L, Zhang MF, Chen XY, Liu JM, Liu ZG, Appl. Phys. Lett., 84, 1731 (2004)

[14] Singh SK, Isiwara H, Jpn. J. Appl. Phys., 44, L734 (2005)

[15] Kim JK, Kim SS, Kim WJ, Mater. Lett., 59, 4006 (2005)

[16] Tay ST, Jiang XH, Huan CHA, Wee TS, Liu R, J. Appl. Phys., 88, 5928 (2000)

[17] Ferreira VM, Baptista JL, Kamba S, Petzelt J, J. Mater. Sci., 28, 5894 (1993)