화학공학소재연구정보센터
홈 로그인 로그아웃 연락처 사이트맵
Korean Journal of Materials Research, Vol.19, No.5, 281-287, May, 2009
DOI10.3740/MRSK.2009.19.5.281  Export Citation
플라즈마 보조 분자선 적층 성장법으로 성장한 ZnO 박막의 청색 발광 중심
Blue Luminescent Center in Undoped ZnO Thin Films Grown by Plasma-assisted Molecular Beam Epitaxy
김종빈, 노영수1, 변동진, 박동희1, 최원국1, †
  • 고려대학교 신소재공학과
  • 1한국과학기술연구원 재료기술연구본부
Jong-Bin Kim, Young-Soo No1, Dongjin Byun, Dong-Hee Park1, and Won-Kook Choi1, †
  • Korea University, Department of Advanced Materials Engineering, Korea University, Sungbuk-Ku Anamdong 5-1, Seoul 136-701, Korea
  • 1Materials Science and Technology Research Division, Korea Institute of Science and Technology, Cheongryang P.O Box 131, Seoul 130-650 Korea
E-mail:
ZnO thin film was grown on a sapphire single crystal substrate by plasma assisted molecular beam epitaxy. In addition to near band edge (NBE) emissions, both blue and green luminescences are also observed together. The PL intensity of the blue luminescence (BL) range from 2.7 to 2.9 eV increased as the amount of activated oxygen increased, but green luminescence (GL) was weakly observed at about 2.4 eV without much change in intensity. This result is quite unlike previous studies in which BL and GL were regarded as the transition between shallow donor levels such as oxygen vacancy and interstitial zinc. Based on the transition level and formation energy of the ZnO intrinsic defects predicted through the first principle calculation, which employs density functional approximation (DFA) revised by local density approximation (LDA) and the LDA+U approach, the green and blue luminescence are nearly coincident with the transition from the conduction band to zinc vacancies of V2- Zn and V- Zn, respectively.
Keywords:plasma-assisted molecular beam epitaxy;ZnO thin film;oxygen vacancy;Zn vacancy;blue luminescence
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