화학공학소재연구정보센터
홈 로그인 로그아웃 연락처 사이트맵
Korean Journal of Materials Research, Vol.18, No.8, 450-453, August, 2008
DOI10.3740/MRSK.2008.18.8.450  Export Citation
In 코도핑 된 p-GaN의 광학적 특성
In Co-Doping Effect on the Optical Properties of P-Type GaN Epilayers
안명환†, 정호용1, 정상조2
  • 전남대학교 공학대학 기계·자동차공학부
  • 1전남대학교 공학대학 생명·화학공학부
  • 2전북대학교 반도체물성연구소
Myung Hwan An†, Ho-Yong Chung1, and Sang-Jo Chung2
  • Division of Mechanical & Auto Motive Engineering, Chonnam National University, Yosu 550-749, Korea
  • 1Division of Biotechnology and Chemical Engineering, Chonnam National University, Yosu 550-749, Korea
  • 2Semiconductor Physics Research Center, Chonbuk National University, Chonju 561-756, Korea
E-mail:
Mg-doped and In-Mg co-doped p-type GaN epilayers were grown in a low-pressure metal organic chemical vapor deposition technique. The effect of In doping on the p-GaN layer was studied through photoluminescence (PL), persistent photoconductivity (PPC), and transmission electron microscopy (TEM) at room temperature. For the In-doped p-GaN layer, the PL intensity increases significantly and the peak position shifts to 3.2 eV from 2.95 eV of conventional p-GaN. Additionally, In doping greatly reduces the PPC, which was very strong in conventional p-GaN. A reduction in the dislocation density is also evidenced upon In doping in p-GaN according to TEM images. The improved optical properties of the In-doped p-GaN layer are attributed to the high crystalline quality and to the active participation of incorporated Mg atoms.
Keywords:persistent photoconductivity;Co-doping;dislocation density
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