Metal Organic Chemical Vapor Deposition법을 이용한 Germanium 전구체의 증착 특성 연구

김선희; 김봉준; 김도형; 이준기; Sun-Hee Kim; Bong-June Kim; Do-Heyoung Kim; June-Key Lee

Korean Journal of Materials Research, Vol.18, No.6, 302-306, June, 2008

DOI10.3740/MRSK.2008.18.6.302 Export Citation

Metal Organic Chemical Vapor Deposition법을 이용한 Germanium 전구체의 증착 특성 연구

Metal Organic Chemical Vapor Deposition Characteristics of Germanium Precursors

김선희, 김봉준, 김도형 ¹, 이준기^†

전남대학교 신소재공학부
¹전남대학교 응용화학공학부

Sun-Hee Kim, Bong-June Kim, Do-Heyoung Kim¹, and June-Key Lee^†

School of Materials Science & Engineering, Chonnam National University, Korea
¹School of Applied Chemical Engineering, Chonnam National University, Korea

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Polycrystalline germanium (Ge) thin films were grown by metal organic chemical vapor deposition (MOCVD) using tetra-allyl germanium [Ge(allyl)4], and germane (GeH4) as precursors. Ge thin films were grown on a TiN(50 nm)/SiO2/Si substrate by varying the growth conditions of the reactive gas (H2), temperature (300-700oC) and pressure (1-760Torr). H2 gas helps to remove carbon from Ge film for a Ge(allyl)4 precursor but not for a GeH4 precursor. Ge(allyl)4 exhibits island growth (VW mode) characteristics under conditions of 760Torr at 400-700oC, whereas GeH4 shows a layer growth pattern (FM mode) under conditions of 5Torr at 400-700oC. The activation energies of the two precursors under optimized deposition conditions were 13.4 KJ/ mol and 31.0 KJ/mol, respectively.

Keywords:Tetra-allyl Germanium;germane;metal organic chemical vapor deposition;TiN

[References]

Chiou HK, Yeh PC, Lin KC, Solid-State Electron., 52(2), 239 (2008)
Hsu BC, Chang ST, Chen TC, Kuo PS, Chen PS, Pei Z, Liu CW, IEEE Electr. Device Lett., 24, 318 (2003)
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Kim YT, Hwang YN, Lee KH, Lee SH, Jeong CW, Ahn SJ, Yeung F, Koh GH, Jeong HS, Chung WY, Kim TK, Park YK, Kim KN, Kong JT in Abstracts of the Solid State Devices andMaterials (Tokyo, Japan, September 2004) p.244 (2004)
Kim RY, Kim HG, Appl. Phys. Lett., 89, 102107 (2006)
Hall LH, J. Electrochem. Soc., 11, 119 (1972)
El Boucham JE, Maury F, Morancho R, J. Anal. Appl. Pyrol., 44, 153 (1998)

[Related Articles]

[1] Chiou HK, Yeh PC, Lin KC, Solid-State Electron., 52(2), 239 (2008)

[2] Hsu BC, Chang ST, Chen TC, Kuo PS, Chen PS, Pei Z, Liu CW, IEEE Electr. Device Lett., 24, 318 (2003)

[3] Takaura N, Terao M, Kurotsuchi K, Yamauchi T, Tonomura O, Hanaoka Y, Takemura R, Osada K, Kawahara T, Mastuoka H, IEDM Technical Digest, 37 (2003)

[4] Ha YH, Yi JH, Horii JH, Park JH, Joo SH, Park SO, Chung UI, Moon JT, VLSI Technical Digest, 175 (2003)

[5] Kim YT, Hwang YN, Lee KH, Lee SH, Jeong CW, Ahn SJ, Yeung F, Koh GH, Jeong HS, Chung WY, Kim TK, Park YK, Kim KN, Kong JT in Abstracts of the Solid State Devices andMaterials (Tokyo, Japan, September 2004) p.244 (2004)

[6] Kim RY, Kim HG, Appl. Phys. Lett., 89, 102107 (2006)

[7] Hall LH, J. Electrochem. Soc., 11, 119 (1972)

[8] El Boucham JE, Maury F, Morancho R, J. Anal. Appl. Pyrol., 44, 153 (1998)