화학공학소재연구정보센터
Korean Journal of Materials Research, Vol.18, No.4, 199-203, April, 2008
[TCTA-TAZ] : Ir(ppy)3 이중 발광층을 갖는 고효율 녹색 인광소자의 제작과 특성 평가
Fabrication and Characterization of High Efficiency Green PhOLEDs with [TCTA-TAZ] : Ir(ppy)3 Double Emission Layers
E-mail:
High-efficiency phosphorescent organic light emitting diodes using TCTA-TAZ as a double host and Ir(ppy)3 as a dopant were fabricated and their electro-luminescence properties were evaluated. The fabricated devices have the multi-layered organic structure of 2-TNATA/NPB/(TCTA-TAZ) : Ir(ppy)3/BCP/SFC137 between an anode of ITO and a cathode of LiF/AL. In the device structure, 2-TNATA[4,4’,4''-tris(2-naphthylphenyl-phenylamino)-triphenylamine] and NPB[N,N’-bis(1-naphthyl)-N,N’-diphenyl-1,1’-biphenyl-4,4’-diamine] were used as a hole injection layer and a hole transport layer, respectively. BCP [2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline] was introduced as a hole blocking layer and an electron transport layer, respectively. TCTA [4,4’,4''-tris(N-carbazolyl)-triphenylamine] and TAZ [3-phenyl-4-(1-naphthyl)-5-phenyl-1,2,4-triazole] were sequentially deposited, forming a double host doped with Ir(ppy)3 in the [TCTA-TAZ] : Ir(ppy)3 region. Among devices with different thickness combinations of TCTA (50 A-200 A) and TAZ (100 A-250 A) within the confines of the total host thickness of 300 A and an Ir(ppy)3-doping concentration of 7%, the best electroluminescence characteristics were obtained in a device with 100 A-think TCTA and 200 A-thick TAZ. The Ir(ppy)3 concentration in the doping range of 4%-10% in devices with an emissive layer of [TCTA (100 A)-TAZ (200 A] : Ir(ppy)3 gave rise to little difference in the luminance and current efficiency.
  1. Tang CW, VanSlyke SA, J. of Appl. Phys. Lett., 51, 913 (1987)
  2. Kido J, Ikeda W, Kimura M, Nagai K, Jpn. J. Appl. Phys., 35, L394 (1996)
  3. Kafafi ZH, Organic Electroluminescence, p. 274-286, Taylor & Francis, New York, (2005). (2005)
  4. Baldo MA, O'Brien DF, You Y, Shoustikov A, Sibley S, Thompson ME, Forrest SR, Nature, 395(6698), 151 (1998)
  5. Adachi C, Baldo MA, Thompson ME, Forrest SR, J. of Appl. Physics, 90, 5048 (2001)
  6. Kim SH, Jang JS, Yook KS, Lee JY, Gong MS, Ryu S, Chang GK, Chang HJ, J. of Appl. Phys. Lett., 103, 054502 (2008)
  7. Zheng T, Choy WCH, J. Phys. D: Appl. Phys., 41, 055103 (2008)
  8. Khalifa MB, Vaufrey D, Tardy J, Organic Electronics, 5, 187 (2004)
  9. Sun J, Zhu X, Yu X, Wong M, Kwok HS, SID 07 DIGEST, 826 (2007). (2007)
  10. Jang JG, Organic Electronics, p.314, Cheongmoongak, Gyonggi, Korea, (2006). (2006)
  11. Farchioni R, Gross G, Organic Electronic Materials, p.428, Springer Series in Materials Science, Berlin, (2001). (2001)
  12. Toerker M, Eritt M, May C, Amelung J, Luber C, Hermann R, Zschippang C, Tomita Y, Leo K, Proc. SID International Symposium, 37(2), 1471 (2006)
  13. Goushi K, Kawamura Y, Sasabem H, Adachi C, Jpn. J. of. Appl. Phys. Lett., 43, L937 (2004)
  14. Chen BJ, Sun XW, Sarma KR, Mat. Sci. Eng. B., 139, 192 (2007)
  15. Kajii H, Sekimoto Y, Hino Y, Ohmori Y, Thin Solid Films, 516, 2272 (2008)