Effect of Deposition and Annealing Temperature on Structural, Electrical and Optical Properties of Ag Doped ZnO Thin Films

Eun-Kyung Jeong; In Soo Kim; Dae-Hyun Kim; Se-Young Choi

Korean Journal of Materials Research, Vol.18, No.2, 84-91, February, 2008

DOI10.3740/MRSK.2008.18.2.084 Export Citation

Effect of Deposition and Annealing Temperature on Structural, Electrical and Optical Properties of Ag Doped ZnO Thin Films

Eun-Kyung Jeong, In Soo Kim, Dae-Hyun Kim, and Se-Young Choi^†

School of Materials Science & Engineering, Yonsei University, 134 Shinchondong, Seodaemungu, Seoul 120-749, Rep. of Korea

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The effects of the deposition and annealing temperature on the structural, electrical and optical properties of Ag doped ZnO (ZnO : Ag) thin films were investigated. All of the films were deposited with a 2wt% Ag2O-doped ZnO target using an e-beam evaporator. The substrate temperature varied from room temperature (RT) to 250oC. An undoped ZnO thin film was also fabricated at 150oC as a reference. The as-grown films were annealed in temperatures ranging from 350 to 650oC for 5 h in air. The Ag content in the film decreased as the deposition and the post-annealing temperature increased due to the evaporation of the Ag in the film. During the annealing process, grain growth occurred, as confirmed from XRD and SEM results. The as-grown film deposited at RT showed n-type conduction; however, the films deposited at higher temperatures showed p-type conduction. The films fabricated at 150oC revealed the highest hole concentration of 3.98×1019 cm-3 and a resistivity of 0.347 Ω·cm. The RT PL spectra of the as-grown ZnO : Ag films exhibited very weak emission intensity compared to undoped ZnO; moreover, the emission intensities became stronger as the annealing temperature increased with two main emission bands of near band-edge UV and defect-related green luminescence exhibited. The film deposited at 150oC and annealed at 350oC exhibited the lowest value of Ivis/ Iuv of 0.05.

Keywords:p-type ZnO;e-beam evaporation;photoluminescence;Ag doping

[References]

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[1] Look DC, Reynolds DC, Litton CW, Jones RL, Eason DB, Cantwell G, Appl. Phys. Lett., 81(10), 1830 (2002)

[2] Look DC, Hemsky JW, Phys. Rev. Lett., 82(12), 2552 (1999)

[3] Zhang SB, Wei SH, Zunger A, Phys. Rev. B, 63, 075205 (2001)

[4] lp K, Overberg ME, Heo YW, Norton DP, Pearton SJ, Stutz CE, Luo B, Ren F, Look DC, Zavada JM, Appl. Phys. Lett., 82(3), 385 (2003)

[5] lp K, Overberg ME, Heo YW, Norton DP, Pearton SJ, Kucheyev SO, Jagadish C, Williams JS, Wilson RG, Zavada JM, Appl. Phys. Lett., 81(21), 3996 (2002)

[6] Chirs G, De Walle V, Phys. Rev. Lett, 85(5), 1012 (2000)

[7] Park CH, Zhang SB, Wei SH, Phys. Rev. Lett., 66, 073202 (2002)

[8] Schirmer OF, Zwingel D, Solid State Commun., 8, 1559 (1970)

[9] Ozgur U, Alivov YI, Liu C, Teke A, Reshchikov MA, Doan S, Avrutin V, Cho SJ, Morkoc H, J. Appl. Phys., 98, 041301 (2005)

[10] Georgobiani AN, Gruzintsev AN, Volkov VT, Vorobiev MO, Demin VI, Dravin VA, Nucl. Instrum. Meth. A, 514, 117 (2003)

[11] Zeuner A, Alves H, Sann J, kriegseis W, Neumann C, Hofmann DM, Meyer BK, Hoffmann A, Haboeck U, Straßburg M, Kaschner A, Phys. Stat. Sol. C, 1(4), 731 (2004)

[12] Kim HS, Pearton SJ, Norton DP, J. Appl. Phys., 102, 104904 (2007)

[13] PrzeYdziecka E, Kaminska E, Pasternak I, Piotrowska A, Kossut J, Phys. Rev. B, 76, 193303 (2007)

[14] Ryu YR, Lee TS, Appl. Phys. Lett., 83(1), 87 (2003)

[15] Kang HS, Kim GH, Kim DL, Chang HW, Ahn BD, Lee SY, Appl. Phys. Lett., 89, 181103 (2006)

[16] Mollwo E, Muller G, Wagner P, Solid State Commun., 13, 1283 (1973)

[17] Duan L, Lin B, Zhang W, Zhong S, Zhuxi F, Appl. Phys. Let., 88, 232110 (2006)