기판 온도에 따른 수소화된 Al-doped ZnO 박막의 특성 변화

탁성주; 강민구; 이승훈; 김원목; 임희진; 김동환; Sung Ju Tark; Min Gu Kang; Seung Hoon Lee; Won Mok Kim; Hee-Jin Lim; Donghwan Kim

Korean Journal of Materials Research, Vol.17, No.12, 629-633, December, 2007

DOI10.3740/MRSK.2007.17.12.629 Export Citation

기판 온도에 따른 수소화된 Al-doped ZnO 박막의 특성 변화

Effect of Growth Temperature on the Properties of Hydrogenation Al-doped ZnO Films

탁성주, 강민구, 이승훈¹, 김원목¹, 임희진, 김동환 ^†

고려대학교 신소재공학과
¹한국과학기술연구원 재료연구부 박막재료연구센터

Sung Ju Tark, Min Gu Kang, Seung Hoon Lee¹, Won Mok Kim¹, Hee-Jin Lim, and Donghwan Kim^†

Department of Materials Science and Engineering, Korea University, Seoul 136-701, Korea
¹Thin Film Materials Research Center, Division of Materials, Korea Institute of Science and Technology, Seoul 130-650, Korea

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This study examined the effect of growth temperature on the electrical and optical properties of hydrogenated Al-doped zinc oxide (AZO:H) thin films deposited by rf magnetron sputtering using a ceramic target (98 wt.% ZnO, 2 wt.% Al2O3). Various AZO films on glass were prepared by changing the substrate temperature from room temperature to 200oC. It was shown that intentionally incorporated hydrogen plays an important role on the electrical properties of AZO : H films by increasing free carrier concentration. As a result, in the 2% H2 addition at the growth temperature of 150oC, resistivity of 3.21×10-4 Ω·cm, mobility of 21.9 cm2/V.s, electric charge carrier concentration of 9.35×1020 cm-3 was obtained. The AZO : H films show a hexagonal wurtzite structure preferentially oriented in the (002) crystallographic direction.

Keywords:Al-doped ZnO;Rf Magnetron sputter;TCO;Hydrogenated

[References]

Yamada A, Wenas WW, Yoshino M, Jpn. J. Appl. Phys., 30, L1152 (1991)
Mizuhashi M, Goto Y, Adachi K, Jpn. J. Appl. Phys., 27, 2053 (1988)
Lan WS, Fonash SJ, J. Electron. Mater., 16, 141 (1987)
Park BO, Ko KH, Lee JH, J. Cyst. Growth, 247, 119 (2003)
Majumder SB, Jain M, Dobal PS, Katiyar RS, Mater. Sci. and Eng. B, 103, 16 (2003)
Van de Walle CG, Phys. Rev. Lett., 85, 1012 (2000)
Van de Walle CG, Neugebauer J, Nature, 423, 626 (2003)
Barens JO, Leary DJ, Jordan AG, J. Electrochem. Soc., 7, 1636 (1980)
Chen M, Pei ZL, Wang X, Sung C, Wen LS, J. Vac. Sci. Technol. A, 19(3), 963 (2001)
Puchert MK, Timbrell PY, Lamb RN, J. Vac. Sci. Technol. A, 14(4), 2220 (1996)
Kim KH, Park KC, Ma DY, J. Appl. Phys., 81, 7764 (1997)
Kohan AF, Ceder G, Morgan D, Van de Walle CG, Phys. Rev. B, 61, 15019 (2000)

[Related Articles]

[1] Yamada A, Wenas WW, Yoshino M, Jpn. J. Appl. Phys., 30, L1152 (1991)

[2] Mizuhashi M, Goto Y, Adachi K, Jpn. J. Appl. Phys., 27, 2053 (1988)

[3] Lan WS, Fonash SJ, J. Electron. Mater., 16, 141 (1987)

[4] Park BO, Ko KH, Lee JH, J. Cyst. Growth, 247, 119 (2003)

[5] Majumder SB, Jain M, Dobal PS, Katiyar RS, Mater. Sci. and Eng. B, 103, 16 (2003)

[6] Van de Walle CG, Phys. Rev. Lett., 85, 1012 (2000)

[7] Van de Walle CG, Neugebauer J, Nature, 423, 626 (2003)

[8] Barens JO, Leary DJ, Jordan AG, J. Electrochem. Soc., 7, 1636 (1980)

[9] Chen M, Pei ZL, Wang X, Sung C, Wen LS, J. Vac. Sci. Technol. A, 19(3), 963 (2001)

[10] Puchert MK, Timbrell PY, Lamb RN, J. Vac. Sci. Technol. A, 14(4), 2220 (1996)

[11] Kim KH, Park KC, Ma DY, J. Appl. Phys., 81, 7764 (1997)

[12] Kohan AF, Ceder G, Morgan D, Van de Walle CG, Phys. Rev. B, 61, 15019 (2000)