다층 RIE Electrode를 이용한 아크릴의 O2/N2 플라즈마 건식 식각

김재권; 김주형; 박연현; 주영우; 백인규; 조관식; 송한정; 이제원; Jaekwon Kim; Juhyeong Kim; Yeonhyun Park; Youngwoo Joo; Inkyeu Baek; Guansik Cho; Hanjung Song; Jewon Lee

Korean Journal of Materials Research, Vol.17, No.12, 642-647, December, 2007

DOI10.3740/MRSK.2007.17.12.642 Export Citation

다층 RIE Electrode를 이용한 아크릴의 O2/N2 플라즈마 건식 식각

O2/N2 Plasma Etching of Acrylic in a Multi-layers Electrode RIE System

김재권, 김주형, 박연현, 주영우, 백인규, 조관식, 송한정, 이제원^†

인제대학교 나노공학부, 나노 메뉴팩처링 연구소

Jaekwon Kim, Juhyeong Kim, Yeonhyun Park, Youngwoo Joo, Inkyeu Baek, Guansik Cho, Hanjung Song, and Jewon Lee^†

School of Nano Engineering, Center for Nano Manufacturing, Inje University, Korea

E-mail:

We investigated dry etching of acrylic (PMMA) in O2/N2 plasmas using a multi-layers electrode reactive ion etching (RIE) system. The multi-layers electrode RIE system had an electrode (or a chuck) consisted of 4 individual layers in a series. The diameter of the electrodes was 150 mm. The etch process parameters we studied were both applied RIE chuck power on the electrodes and % O2 composition in the N2/O2 plasma mixtures. In details, the RIE chuck power was changed from 75 to 200 W.% O2 in the plasmas was varied from 0 to 100% at the fixed total gas flow rates of 20 sccm. The etch results of acrylic in the multilayers electrode RIE system were characterized in terms of negatively induced dc bias on the electrode, etch rates and RMS surface roughness. Etch rate of acrylic was increased more than twice from about 0.2 μm/min to over 0.4 μm/min when RIE chuck power was changed from 75 to 200 W. 1 sigma uniformity of etch rate variation of acrylic on the 4 layers electrode was slightly increased from 2.3 to 3.2% when RIE chuck power was changed from 75 to 200 W at the fixed etch condition of 16 sccm O2/4 sccm N2 gas flow and 100 mTorr chamber pressure. Surface morphology was also investigated using both a surface profilometry and scanning electron microscopy (SEM). The RMS roughness of etched acrylic surface was strongly affected by % O2 composition in the O2/N2 plasmas. However, RIE chuck power changes hardly affected the roughness results in the range of 75-200 W. During etching experiment, Optical Emission Spectroscopy (OES) data was taken and we found both N2 peak (354.27 nm) and O2 peak (777.54 nm). The preliminarily overall results showed that the multi-layers electrode concept could be successfully utilized for high volume reactive ion etching of acrylic in the future.

Keywords:Acrylic;Polymer etching;Plasma etching;Multi-layers electrode;RIE

[References]

Maunza I, Bonfiglio A, Biosens. Bioelectron., 22(12), 2775 (2007)
Hosono H, J. of Non-Cryst. Solids, 352(9-20), 851 (2006)
Ryu GS, Choe KB, Song CK, Thin Solid Films, 514(1-2), 302 (2006)
Jackson WB, Herman GS, Hoffman RL, Taussig C, Braymen S, Jeffer F, Hauschildt J, J. of Non-Cryst. Solids, 352(9-20), 1753 (2006)
Fortunato E, Barquinha P, Pimentel A, Goncalves A, Marques A, Pereira L, Martins R, Thin Solid Films, 487(1-2), 205 (2005)
Shim MS, Gowtham M, Kim DY, Seo CK, Yi JS, Mat. Sci. Semicond. Proc., 7(4-6), 423 (2004)
Cosseddu P, Bonfiglio A, Thin Solid Films, 515(19), 7551 (2007)
Zhung C, Xu J, W. M, Zheng W, Biotech. Adv., 24(3), 243 (2006)
Yoo SK, Lee JH, Yun SS, Gu BK, Lee JH, Biosens. Bioelectron., 22(8), 1586 (2007)
Zhu L, Teng W, Xu H, Liu Y, Jiang Q, Wang C, Qiu Y, Surf. Coat. Technol., in press (2007)
Huang J, Jah Y, Yau B, Chen C, Lu H, Thin Solid Films, 370(1), 33 (2000)
Libermann MA, Lichtenberg AJ, Principles of Plasma Discharges and Materials Processing, John Wiley & Sons, New Jersey, USA, (2005). (2005)
Sugawara M, Plasma Etching, Oxford University Press, NY, USA, (1998). (1998)
Shul RJ, Pearton SJ, Handbook of Advanced Plasma Processing Techniques, Springer, NY, USA, (2000). (2000)
Popov OA, High Density Plasma Sources, Noyes Publications, NJ, USA, (1995). (1995)
Payling R, Larkins P, Optical Emission Lines of the Elements, John wiley & Sons, Ltd., NJ, USA, (2004). (2004)

[Referenced By]

[1] Maunza I, Bonfiglio A, Biosens. Bioelectron., 22(12), 2775 (2007)

[2] Hosono H, J. of Non-Cryst. Solids, 352(9-20), 851 (2006)

[3] Ryu GS, Choe KB, Song CK, Thin Solid Films, 514(1-2), 302 (2006)

[4] Jackson WB, Herman GS, Hoffman RL, Taussig C, Braymen S, Jeffer F, Hauschildt J, J. of Non-Cryst. Solids, 352(9-20), 1753 (2006)

[5] Fortunato E, Barquinha P, Pimentel A, Goncalves A, Marques A, Pereira L, Martins R, Thin Solid Films, 487(1-2), 205 (2005)

[6] Shim MS, Gowtham M, Kim DY, Seo CK, Yi JS, Mat. Sci. Semicond. Proc., 7(4-6), 423 (2004)

[7] Cosseddu P, Bonfiglio A, Thin Solid Films, 515(19), 7551 (2007)

[8] Zhung C, Xu J, W. M, Zheng W, Biotech. Adv., 24(3), 243 (2006)

[9] Yoo SK, Lee JH, Yun SS, Gu BK, Lee JH, Biosens. Bioelectron., 22(8), 1586 (2007)

[10] Zhu L, Teng W, Xu H, Liu Y, Jiang Q, Wang C, Qiu Y, Surf. Coat. Technol., in press (2007)

[11] Huang J, Jah Y, Yau B, Chen C, Lu H, Thin Solid Films, 370(1), 33 (2000)

[12] Libermann MA, Lichtenberg AJ, Principles of Plasma Discharges and Materials Processing, John Wiley & Sons, New Jersey, USA, (2005). (2005)

[13] Sugawara M, Plasma Etching, Oxford University Press, NY, USA, (1998). (1998)

[14] Shul RJ, Pearton SJ, Handbook of Advanced Plasma Processing Techniques, Springer, NY, USA, (2000). (2000)

[15] Popov OA, High Density Plasma Sources, Noyes Publications, NJ, USA, (1995). (1995)

[16] Payling R, Larkins P, Optical Emission Lines of the Elements, John wiley & Sons, Ltd., NJ, USA, (2004). (2004)