Self assembled-monolayer(SAM)법을 이용한 TaN 확산방지막의 무전해 Cu 도금용 Pd seed layer 제조  및 특성

한원규; 조진기; 최재웅; 김정태; 염승진; 곽노정; 김진웅; 강성군; Won-Kyu Han; Jin-Ki Cho; Jae-Woong Choi; Jeong-Tae Kim; Seung-Jin Yeom; Noh-Jung Kwak; Jin-Woong Kim; Sung-Goon Kang

Korean Journal of Materials Research, Vol.17, No.9, 469-474, September, 2007

DOI10.3740/MRSK.2007.17.9.469 Export Citation

Self assembled-monolayer(SAM)법을 이용한 TaN 확산방지막의 무전해 Cu 도금용 Pd seed layer 제조 및 특성

Pd Seed Layer for Electroless Cu Deposition on TaN Diffusion Barrier by Self-Assembled-Monolayer Method(SAM)

한원규, 조진기¹, 최재웅, 김정태², 염승진², 곽노정², 김진웅², 강성군 ^†

한양대학교 신소재 공학부
¹한국 산업기술 대학교 신소재 공학부
²하이닉스 반도체

Won-Kyu Han, Jin-Ki Cho¹, Jae-Woong Choi, Jeong-Tae Kim², Seung-Jin Yeom², Noh-Jung Kwak², Jin-Woong Kim², and Sung-Goon Kang^†

Division of Materials Science and Engineering, Hanyang University, Seoul 133-791, Korea
¹Department of Advanced Materials Science and Engineering, Korea Polytechnic University, 2121 Sigeung, Kyonggi-do, Korea
²R&D Divisions, Hynix Semiconductor Inc., San136-1 Ami-ri Bubal-eub Icheon-Si Kyoungki-do 467-701 Korea

E-mail:

Electroless deposition(ELD) was applied to fabricate Cu interconnections on a TaN diffusion barrier with Pd seed layer. The Pd seed layer was obtained by self-assembled monolayer method(SAM) with PDDA and PSS as surfactants. We were able to obtain about 10nm Pd nano particles as seeds for electroless Cu deposition and the density of Pd seeds was much higher than that of Pd seeds fabricated by conventional Pd sensitization-activation method. Also we were able to obtain finer Cu interconnections by ELD. Therefore we concluded that the Pd seed layer by SAM was able to be applied to form Cu interconnection by ELD for under 30nm feature.

Keywords:Layer-by Layer;Self assembled monolayer;ELD;X-ray photoelectron spectroscopy

[References]

Li B, Sullivan TD, Lee TC, Badami D, Microelectron. Reliab., 44, 365 (2004)
Edelstein DC, Sai-Halasz GA, Mii YJ, IBM J. Res. Develop, 39(4), 383 (1995)
Stamper AK, Fushelier MB, Tian X, Advanced wiring RC delay issues for sub-0.25-micron general CMOS in proceedings of Int. Interconnect Tech. Conf. (IITC) 62 (1998) (1998)
Ritter G, McHugh P, Wilson G, Ritzdorf T, Solid-State Electron., 44(5), 797 (2000)
Cunningham JA, Semicond. Int., 23, 97 (2003)
Rose K, Mangaser R, IEEE/SEMI Advanced Semiconductor Manufacturing Conference and Workshop, Boston, MA, 347 (1998) (1998)
Reid J, Mayer S, Broadbent E, Klawuhn E, Ashtiani K, Solid State Technol., 43, 86 (2000)
Lau PP, Wong CC, Chan L, Appl. Surf. Sci., 253(5), 2357 (2006)
Suh BS, Lee YJ, Hwang JS, Park CO, Thin Solid Films, 348(1-2), 299 (1999)
Hsu HH, Hsieh CC, Chen MH, Lin SJ, Yeh JW, J. Electrochem. Soc., 148(9), C590 (2001)
Wang Z, Sakaue H, Shingubara S, Takahagi T, Jpn. J. Appl. Phys, 42, 1843 (2003)
Xie Q, Qu XP, Tan JJ, Jiang YL, Zhou M, Chen T, Ru GP, Appl. Surf. Sci., 253(3), 1666 (2006)
Luan B, Yeung M, Wells W, Liu X, Appl. Surf. Sci., 156(1-4), 26 (2000)

[Related Articles]

[1] Li B, Sullivan TD, Lee TC, Badami D, Microelectron. Reliab., 44, 365 (2004)

[2] Edelstein DC, Sai-Halasz GA, Mii YJ, IBM J. Res. Develop, 39(4), 383 (1995)

[3] Stamper AK, Fushelier MB, Tian X, Advanced wiring RC delay issues for sub-0.25-micron general CMOS in proceedings of Int. Interconnect Tech. Conf. (IITC) 62 (1998) (1998)

[4] Ritter G, McHugh P, Wilson G, Ritzdorf T, Solid-State Electron., 44(5), 797 (2000)

[5] Cunningham JA, Semicond. Int., 23, 97 (2003)

[6] Rose K, Mangaser R, IEEE/SEMI Advanced Semiconductor Manufacturing Conference and Workshop, Boston, MA, 347 (1998) (1998)

[7] Reid J, Mayer S, Broadbent E, Klawuhn E, Ashtiani K, Solid State Technol., 43, 86 (2000)

[8] Lau PP, Wong CC, Chan L, Appl. Surf. Sci., 253(5), 2357 (2006)

[9] Suh BS, Lee YJ, Hwang JS, Park CO, Thin Solid Films, 348(1-2), 299 (1999)

[10] Hsu HH, Hsieh CC, Chen MH, Lin SJ, Yeh JW, J. Electrochem. Soc., 148(9), C590 (2001)

[11] Wang Z, Sakaue H, Shingubara S, Takahagi T, Jpn. J. Appl. Phys, 42, 1843 (2003)

[12] Xie Q, Qu XP, Tan JJ, Jiang YL, Zhou M, Chen T, Ru GP, Appl. Surf. Sci., 253(3), 1666 (2006)

[13] Luan B, Yeung M, Wells W, Liu X, Appl. Surf. Sci., 156(1-4), 26 (2000)