TRISO 피복 입자에서 증착 조건이 탄화규소층의 특성에 미치는 영향

박종훈; 김원주; 박정남; 박경환; 박지연; 이영우; Jong Hoon Park; Weon Ju Kim; Jeong Nam Park; Kyeong Hwan Park; Ji Yeon Park; Young Woo Lee

Korean Journal of Materials Research, Vol.17, No.3, 160-166, March, 2007

DOI10.3740/MRSK.2007.17.3.160 Export Citation

TRISO 피복 입자에서 증착 조건이 탄화규소층의 특성에 미치는 영향

Effect of Deposition Parameters on the Property of SiC Layer in TRISO-Coated Particles

박종훈, 김원주^†, 박정남, 박경환, 박지연, 이영우¹

한국원자력연구소 원자력재료기술개발부
¹한국원자력연구원 입자연료개발부

Jong Hoon Park, Weon Ju Kim^†, Jeong Nam Park, Kyeong Hwan Park, Ji Yeon Park, and Young Woo Lee¹

Nuclear Materials Technology Development Division, Korea Atomic Energy Research Institute, Korea
¹HTCR Fuel Development Division, Korea Atomic Energy Research Institute, Korea

E-mail:

초록

TRISO coatings on surrogate kernels were conducted by a fluidized-bed chemical vapor deposition (FBCVD) method. Effects of the deposition temperature and the gas flow rate on the properties of SiC layer were investigated in the TRISO-coated particles. Deposition rate of the SiC layer decreased as the deposition temperature increased in the temperature range of . At the deposition temperature of the SiC layer contained an excess carbon, whereas the SiC layers had stoichiometric compositions at . Hardness and elastic modulus measured by a nanoindentation method were the highest in the SiC layer deposited at . The SiC layer deposited at the gas flow rate of 4000 sccm exhibited a high porosity and contained large pores more than , being due to a violent spouting of particles. On the other hand, the SiC layer deposited at 2500 sccm revealed the lowest porosity.

Keywords:TRISO coating;silicon carbide;fluidized-bed chemical vapor deposition

[References]

A Technology Roadmap for Generation IV Nuclear Energy Systems, Generation IV International Forum, GIF-002-00 (2002) (2002)
R&D Program Plan for the Very High Temperature Reactor (VHTR), Generation IV International Forum (2004) (2004)
Gulden TD, Smith CL, Harmon DP, Nucl. Technol., 16, 100 (1972)
Nabielek H, Kuhnlein W, Schenk W, Heit W, Christ A, Ragoss H, Nucl. Eng. Des., 121, 199 (1990)
Miller GK, Petti DA, Varacalle Jr DJ, Maki JT, J. Nucl. Mater., 317, 69 (2003)
Price RJ, Nucl. Technol., 35, 320 (1977)
Minato K, Fukuda K, J. Nucl. Mater., 149, 233 (1987)
Lee YJ, Choi DJ, Park JY, Hong GW, J. Mater. Sci., 35(18), 4519 (2000)
Xu SJ, Zhou JG, Yang B, Zhang BZ, J. Nucl. Mater., 224, 12 (1995)
Hitchman ML, Jensen KF, Chemical Vapor Deposition-Principles and Applications, p. 31, Academic Press, London, England (1993) (1993)
Kim WJ, Park JY, Kim JI, Hong KW, Ha JW, J. Kor. Ceram. Soc., 38(4), 485 (2001)
Cheng DJ, Shyy WJ, Kuo DH, Han MH, J. Electrochem. Soc., 134(12), 3145 (1987)
Minato K, Fukuda K, Adv. Mater. Manuf. Proc., 3(4), 617 (1988)
Gulden TD, J. Am. Ceram. Soc., 51, 424 (1968)

[Referenced By]

[1] A Technology Roadmap for Generation IV Nuclear Energy Systems, Generation IV International Forum, GIF-002-00 (2002) (2002)

[2] R&D Program Plan for the Very High Temperature Reactor (VHTR), Generation IV International Forum (2004) (2004)

[3] Gulden TD, Smith CL, Harmon DP, Nucl. Technol., 16, 100 (1972)

[4] Nabielek H, Kuhnlein W, Schenk W, Heit W, Christ A, Ragoss H, Nucl. Eng. Des., 121, 199 (1990)

[5] Miller GK, Petti DA, Varacalle Jr DJ, Maki JT, J. Nucl. Mater., 317, 69 (2003)

[6] Price RJ, Nucl. Technol., 35, 320 (1977)

[7] Minato K, Fukuda K, J. Nucl. Mater., 149, 233 (1987)

[8] Lee YJ, Choi DJ, Park JY, Hong GW, J. Mater. Sci., 35(18), 4519 (2000)

[9] Xu SJ, Zhou JG, Yang B, Zhang BZ, J. Nucl. Mater., 224, 12 (1995)

[10] Hitchman ML, Jensen KF, Chemical Vapor Deposition-Principles and Applications, p. 31, Academic Press, London, England (1993) (1993)

[11] Kim WJ, Park JY, Kim JI, Hong KW, Ha JW, J. Kor. Ceram. Soc., 38(4), 485 (2001)

[12] Cheng DJ, Shyy WJ, Kuo DH, Han MH, J. Electrochem. Soc., 134(12), 3145 (1987)

[13] Minato K, Fukuda K, Adv. Mater. Manuf. Proc., 3(4), 617 (1988)

[14] Gulden TD, J. Am. Ceram. Soc., 51, 424 (1968)