폴리머 기판위에 형성된 나노구조제어 알루미나의 캐패시터 특성

정승원; 민형섭; 한정환; 이전국; Seung-Won Jung; Hyung-Sub Min; Jeong-Whan Han; Jeon-Kook Lee

Korean Journal of Materials Research, Vol.17, No.2, 81-85, February, 2007

DOI10.3740/MRSK.2007.17.2.081 Export Citation

폴리머 기판위에 형성된 나노구조제어 알루미나의 캐패시터 특성

Capacitance Properties of Nano-Structure Controlled Alumina on Polymer Substrate

정승원^{1, 2}, 민형섭¹, 한정환², 이전국^{1, †}

¹한국과학기술연구원 박막재료연구센터
²인하대학교 신소재공학부

Seung-Won Jung^{1, 2}, Hyung-Sub Min¹, Jeong-Whan Han², and Jeon-Kook Lee^{1, †}

¹Thin Film Materials Research Center, KIST, Seoul, 130-650, Korea
²Department of Materials Science and Engineering, Inha University, Inchon 402-751, Korea

E-mail:

Embedded capacitor technology can improve electrical perfomance and reduce assembly cost compared with traditional discrete capacitor technology. To improve the capacitance density of the based embedded capacitor on Cu cladded fiber reinforced plastics (FR-4), the specific surface area of the thin films was enlarged and their surface morphologies were controlled by anodization process parameters. From I-V characteristics, it was found that breakdown voltage and leakage current were 23 V and at 3.3 V, respectively. We have also measured C-V characteristics of structure on CU/FR4. The capacitance density was and the dielectric loss was 0.04. This nano-porous is a good material candidate for the embedded capacitor application for electronic products.

Keywords:Embedded capacitor;PCB;anodic aluminum oxide;capacitance density

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[1] Bhattacharta SK, Tummala RR, J. Mater. Sci., 11, 253 (2000)

[2] Mccormick MA, Slamovich EB, J. Em. Ceram. Soc., 23, 2142 (2003)

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[4] Croswell R, Savic J, www.circuitree.com., Aug, (2002) (2002)

[5] Ulrich R, IEEE Press, 55 (2003)

[6] Ghosh D, Laughlin B, Nath J, Kingon AI, Steer MB, Maria JP, Thin Solid Films, 496(2), 669 (2006)

[7] Parkhutik VP, Shershulsky VI, J. Phys. D, Appl. Phys., 25, 1258 (1992)

[8] Lohrengel MM, Mater. Sci. Eng., 11, 243 (1993)

[9] Park SS, Lee BT, J. Elect. Ceram., 13, 111 (2004)

[10] Hickmott TW, J. Appl. Phys., 93, 3461 (2003)

[11] Yu X, Li Y, Ge W, Yang Q, Zhu N, Zadeh KK, Nano. Tech., 17, 808 (2006)

[12] Lee KH, Lee HY, Jeong WY, J. of. Kor. Electrochem. Soc., 4, 47 (2001)

[13] Hickmott TW, J. Appl. Phys., 87, 7903 (2000)

[14] Hickmott TW, J. Appl. Phys., 88, 2805 (2000)

[15] Hong SK, J. Kor. Elect., 42, 1 (2005)