Joule열이 Sn-3.5Ag 플립칩 솔더범프의 Electromigration 거동에 미치는 영향

이장희; 양승택; 서민석; 정관호; 변광유; 박영배; Jang-Hee Lee; Seung-Taek Yang; Min-Suk Suh; Qwan-Ho Chung; Kwang-Yoo Byun; Young-Bae Park

Korean Journal of Materials Research, Vol.17, No.2, 91-95, February, 2007

DOI10.3740/MRSK.2007.17.2.091 Export Citation

Joule열이 Sn-3.5Ag 플립칩 솔더범프의 Electromigration 거동에 미치는 영향

Effect of Joule Heating on Electromigration Characteristics of Sn-3.5Ag Flip Chip Solder Bump

이장희, 양승택¹, 서민석¹, 정관호¹, 변광유¹, 박영배^†

안동대학교 신소재공학부
¹하이닉스 반도체 PKG 연구소

Jang-Hee Lee, Seung-Taek Yang¹, Min-Suk Suh¹, Qwan-Ho Chung¹, Kwang-Yoo Byun¹, and Young-Bae Park^†

School of Materials Science and Engineering, Andong National University, Andong 760-749, Korea
¹Package R&D Division, Hynix Semiconductor Inc., Inchon 467-701, Korea

E-mail:

Electromigration characteristics of Sn-3.5Ag flip chip solder bump were analyzed using flip chip packages which consisted of Si chip substrate and electroplated Cu under bump metallurgy. Electromigration test temperatures and current densities peformed were respectively. Mean time to failure of solder bump decreased as the temperature and current density increased. The activation energy and current density exponent were found to be 1.63 eV and 4.6, respectively. The activation energy and current density exponent have very high value because of high Joule heating. Evolution of Cu-Sn intermetallic compound was also investigated with respect to current density conditions.

Keywords:Electromigration;Joule heating;flip chip bonding;Pb-free;Sn-3.5Ag

[References]

Huang AT, Tu KN, Appl. Phys, 100, 033512 (2006)
Chae SH, Zhang X, Chao HL, Lu KH, Ho PS, in Proceedings of 56rd ECTC, 650 (2006)
Ding M, Wang G, Chao B, Ho PS, J. Appl. Phys, 90, 094906 (2006)
Lloyd JR, J. Phys. D. Appl, Phys, 32, R109 (1999)
Shao TL, Chen YH, Chiu SH, Chen C, J. Appl. Phys, 96(8), 4518 (2004)
Black JR, IEEE Trans. Electron Devices, ED-16(4), 338 (1969)
Chiu SH, Shao TL, Chen C, Appl. Phys. Lett., 88, 022110 (2006)
Hsu YC, Chou CK, Liu PC, Chen C, J. Appl. Phys, 98, 033523 (2005)
Lee TY, Tu KN, J. Appl. Phys, 90(9), 4502 (2001)
Choi WJ, Yeh ECC, Tu KN, J. Appl. Phys, 94(9), 5665 (2003)
Bandyopadhyay AK, Sen SK, J. Appl. Phys, 67(8), 3681 (1990)
Nah JW, Ren F, Tu KN, J. Appl. Phys, 99, 023520 (2006)
Gan H, Tu KN, J. Appl. Phys, 97, 063514 (2005)

[1] Huang AT, Tu KN, Appl. Phys, 100, 033512 (2006)

[2] Chae SH, Zhang X, Chao HL, Lu KH, Ho PS, in Proceedings of 56rd ECTC, 650 (2006)

[3] Ding M, Wang G, Chao B, Ho PS, J. Appl. Phys, 90, 094906 (2006)

[4] Lloyd JR, J. Phys. D. Appl, Phys, 32, R109 (1999)

[5] Shao TL, Chen YH, Chiu SH, Chen C, J. Appl. Phys, 96(8), 4518 (2004)

[6] Black JR, IEEE Trans. Electron Devices, ED-16(4), 338 (1969)

[7] Chiu SH, Shao TL, Chen C, Appl. Phys. Lett., 88, 022110 (2006)

[8] Hsu YC, Chou CK, Liu PC, Chen C, J. Appl. Phys, 98, 033523 (2005)

[9] Lee TY, Tu KN, J. Appl. Phys, 90(9), 4502 (2001)

[10] Choi WJ, Yeh ECC, Tu KN, J. Appl. Phys, 94(9), 5665 (2003)

[11] Bandyopadhyay AK, Sen SK, J. Appl. Phys, 67(8), 3681 (1990)

[12] Nah JW, Ren F, Tu KN, J. Appl. Phys, 99, 023520 (2006)

[13] Gan H, Tu KN, J. Appl. Phys, 97, 063514 (2005)