준귀금속 전이원소, Pt, Pd를 이용한 p-InGaAs의 오믹 접촉저항 특성 연구

박영산; 류상완; 유준상; 김효진; 김선훈; 김진혁; Young-San Park; Sang-Wan Ryu; Jun-Sang Yu; Hyo-Jin Kim; Sun-Hun Kim; Jin-Hyeok Kim

Korean Journal of Materials Research, Vol.16, No.10, 629-632, October, 2006

DOI10.3740/MRSK.2006.16.10.629 Export Citation

준귀금속 전이원소, Pt, Pd를 이용한 p-InGaAs의 오믹 접촉저항 특성 연구

Ohmic Contact Characteristics of p-InGaAs with Near-Noble Transition Metals of Pt and Pd

박영산, 류상완, 유준상¹, 김효진², 김선훈², 김진혁^{3, †}

전남대학교 물리학과
¹(주)OE Solutions
²한국광기술원(KOPTI)
³전남대학교 신소재공학부

Young-San Park, Sang-Wan Ryu, Jun-Sang Yu¹, Hyo-Jin Kim², Sun-Hun Kim², and Jin-Hyeok Kim^{3, †}

Department of Physics and Institute of Optoelectronics, Chonnam National University, Gwangju 500-757, Korea
¹OE Solutions, Gwangju 500-460, Korea
²Korea Photonics Technology Institute, Gwangju 500-460, Korea
³Department of Materials Science and Engineering, Chonnam National University, Gwangju 500-757, Korea

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Electrical characteristics of Pt/Ti/Pt/Au and Pd/Zn/Pd/Au contacts to p-type InGaAs grown on an InP substrate have been characterized as a function of the doping concentration and the annealing temperature. The Pt/Ti/Pt/Au contacts produced the specific contact resistance as low as , when heat-treated at an annealing temperature of . Comparison of the Pt/Ti/Pt/Au and Ti/Pt/Au contacts showed that the first Pt layer plays an important role in reducing the contact resistivity probably by lowering energy barrier at the metal-semiconductor interface. For the Pd/Zn/Pd/Au contacts, the contact resistivity remained virtually unchanged with increasing annealing temperature. The specific contact resistivity as low as was obtained. The results indicate that the Pt/Ti/Pt/Au and Pd/Zn/Pd/Au schemes could be potentially important for the fabrication of InP-based optoelectronic devices, such as photodetector and optical modulator.

Keywords:InGaAs;ohmic contact;contact resistivity

[References]

Agarwal A, Banerjee S, Grosz DF, Kung AP, Maywar DN, Wood TH, IEEE Photon. Technol. Lett., 17, 1779 (2003)
Kawanishi H, Yamauchi Y, Mineo N, Shibuya Y, Murai H, Yamada K, Wada H, IEEE Photon. Technol. Lett., 13, 954 (2001)
Franz G, Amann M, J. Electrochem. Soc., 140, 847 (1993)
Kim DY, Yu JS, Bae SJ, Song JD, Kim JM, Lee YT, J. Korean Phys. Soc., 38, 236 (2001)
Ressel P, Vogel K, Frizsche D, Mause K, Electronics Letters, 28, 2237 (1992)
Wang LC, Park MH, Deng F, Clawson A, Lau SS, Hwang DM, Palmstrom CJ, Appl. Phys. Lett., 66, 3310 (1995)
Hwang S, Shim J, Eo Y, J. Korean Phys. Soc., 46, 751 (2005)
Woo YD, Hong JS, Sae Mulli, 49, 164 (2004)
Reeves GK, Harrison HB, IEEE Electron Device Lett., 3, 111 (1982)

[Referenced By]

[1] Agarwal A, Banerjee S, Grosz DF, Kung AP, Maywar DN, Wood TH, IEEE Photon. Technol. Lett., 17, 1779 (2003)

[2] Kawanishi H, Yamauchi Y, Mineo N, Shibuya Y, Murai H, Yamada K, Wada H, IEEE Photon. Technol. Lett., 13, 954 (2001)

[3] Franz G, Amann M, J. Electrochem. Soc., 140, 847 (1993)

[4] Kim DY, Yu JS, Bae SJ, Song JD, Kim JM, Lee YT, J. Korean Phys. Soc., 38, 236 (2001)

[5] Ressel P, Vogel K, Frizsche D, Mause K, Electronics Letters, 28, 2237 (1992)

[6] Wang LC, Park MH, Deng F, Clawson A, Lau SS, Hwang DM, Palmstrom CJ, Appl. Phys. Lett., 66, 3310 (1995)

[7] Hwang S, Shim J, Eo Y, J. Korean Phys. Soc., 46, 751 (2005)

[8] Woo YD, Hong JS, Sae Mulli, 49, 164 (2004)

[9] Reeves GK, Harrison HB, IEEE Electron Device Lett., 3, 111 (1982)