D.C. 마그네트론 스퍼터링법으로 제조한 ITO 및 ITO/Ag/ITO 박막의 미세조직과 투명 전극 특성

최용락; 김선화; Yong-Lak Choi; Seon-Hwa Kim

Korean Journal of Materials Research, Vol.16, No.8, 490-496, August, 2006

DOI10.3740/MRSK.2006.16.8.490 Export Citation

D.C. 마그네트론 스퍼터링법으로 제조한 ITO 및 ITO/Ag/ITO 박막의 미세조직과 투명 전극 특성

Microstructure and Properties of ITO and ITO/Ag/ITO Multilayer Thin Films Prepared by D.C. Magnetron Sputtering

최용락^†, 김선화

순천향대학교 신소재공학과

Yong-Lak Choi^†, and Seon-Hwa Kim

Department of Materials Engineering, Soonchunhyang University, Asan 336-745, Korea

E-mail:

ITO monolayer and ITO/Ag/ITO multilayer thin films are prepared by D.C. magnetron sputtering method. Ag layer was inserted for applying ITO to a flexible substrate at low temperature. Carrier concentration and carrier mobility of ITO and ITO/Ag/ITO thin films were measured, the transmittance of them also was done. The amorphous phase was confirmed to be combined in addition to (400) and (440) peaks from XRD result of ITO thin film. As the substrate temperature increased, the preferred orientation of (400) appeared. From the result of application of Ag layer at room temperature, the growth of columnar structure was inhibited, and the amorphous phase formed mostly. The ITO/Ag/ITO thin film represented the transmittance of above 80% when the thickness of Ag layer was 50 , and the concentration of carrier increased up to above 10 times than that of ITO thin film. Finally, since very low resistance of 3.9 was observed, the effective application of low temperature process is expected to be possible for ITO thin film.

Keywords:ITO thin film;flexible display;multilayer;transmittance;sheet resistance

[References]

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[1] Lee SJ, Yoon HW, Kim BS, Lee SU, Park MW, Kwak DJ, J. Kor. Inst. Met.& Mater., 42(9), 745 (2004)

[2] Jeong WJ, Cho JC, Jeong YK, Yoo YT, J. of the Korean Sensors Society, 6, 49 (1997)

[3] Kim JY, Lee YE, Cho HS, Lee DH, Kim YJ, Korean J. Mater. Res., 5(3), 280 (1995)

[4] Park SK, Han JI, Moon DG, Kim WK, Kwak MG, Mat. Res. Soc. Symp. Proc., 747 (2003)

[5] Basu N, Batabyal AK, Barua AK, J. Appl. Phys., 54, 6 (1983)

[6] Sirringhaus H, Brown PJ, Friend RH, Nielsen MM, Nature, 401, 685 (1999)

[7] Kim JS, Friend RH, Cacialli F, Appl. Phys. Lett., 74, 3084 (1999)

[8] Takaki S, Matsumotoa K, Suzuki K, Appl. Surf. Sci., 33-34, 919 (1988)

[9] Chopra KL, Major S, Pandya DK, Thin Solid Films, 102, 1-8 (1983)

[10] Kim YS, Jun YS, Kim SS, Korean J. Mater. Res., 9(11), 1055 (1999)

[11] Kaneko E, Liquid Crystal Displays, KTK Scientific, Tokyo (1987) (1987)

[12] Bellingham JR, Philips WA, Adkins CJ, Thin Solid Films, 195 (1991)

[13] Park TW, Yoon SJ, Choi JW, Kim HJ, Jung HJ, Park CY, J. of KIEEME, 11, 833 (1998)

[14] WFW, Chiou BS, Appl. Surf. Sci., 68, 497 (1993)

[15] Leaver KD, Chapman BN, Thin Films, p29, Whkeham Publication, London (1971) (1971)

[16] Yee KK, Int. Met. Rev., 23, 19 (1978)

[17] Maissel L, Glang R, Handbook of Thin Films Technology, p18, McGraw-Hill, (1970) (1970)

[18] Ro KH, Park W, Choe G, Ahn JC, Korean J. Mater. Res., 7(1), 21 (1997)

[19] McMillan J, Petersnon E, J. Appl. Phys., 8, 5238 (1979)

[20] Maniv S, Miner CJ, Westwood WD, J. Vac. Sci. Technol. A, 1(3), 1379 (1983)

[21] Karasawa T, Miyata Y, Thin Solid Films, 223, 135 (1997)

[22] Kulkarni AK, Lim T, Khan M, Schulz KH, J. Vac. Sci. Technol. A, 16(3), 1636 (1998)