Bismuth Telluride 박막의 열전특성 개선을 위한 급속 열처리효과

김동호; 이건환; Dong-Ho Kim; Gun-Hwan Lee

Korean Journal of Materials Research, Vol.16, No.5, 292-296, May, 2006

DOI10.3740/MRSK.2006.16.5.292 Export Citation

Bismuth Telluride 박막의 열전특성 개선을 위한 급속 열처리효과

Improvement of Thermoelectric Properties of Bismuth Telluride Thin Films using Rapid Thermal Processing

김동호^†, 이건환

한국기계연구원 재료기술연구소 표면기술연구센터

Dong-Ho Kim^†, and Gun-Hwan Lee

Surface Technology Research Center, Korea Institute of Machinery and Materials (KIMM), Korea

E-mail:

Effects of rapid thermal annealing of bismuth telluride thin films on their thermoelectric properties were investigated. Films with four different compositions were elaborated by co-sputtering of Bi and Te targets. Rapid thermal treatments in range of were carried out during 10 minutes under the reducing atmosphere (Ar with 10% ). As the temperature of thermal treatment increased, carrier concentrations of films decreased while their mobilities increased. These changes were clearly observed for the films close to the stoichiometric composition. Rapid thermal treatment was found to be effective in improving the thermoelectric properties of films. Recrystallization of phase has caused the enhancement of thermoelectric properties, along with the decrease of the carrier concentration. Maximum values of Seebeck coefficient and power factor were obtained for the films treated at (about and , respectively). With further higher temperature (), thermoelectric properties deteriorated due to the evaporation of Te element and subsequent disruption of film's structure.

Keywords:Bismuth telluride . thermoelectric thin film;thermoelectric properties;Hall effect measurement;rapid thermal processing

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[1] Vining CB, Nature, 413, 577 (2001)

[2] Sales BC, Science, 295, 1248 (2002)

[3] Zou HL, Rowe DM, Min G, J. Cryst. Growth, 222(1-2), 82 (2001)

[4] Dheepa J, Sathyamoorthy R, Velumani S, Subbarayan A, Natarajan K, Sebastian PJ, Sol. Energy Mater. Sol. Cells, 81(3), 305 (2004)

[5] Volklein F, Baier V, Dillner U, Kessler E, Thin Solid Films, 187, 253 (1990)

[6] Cho KW, Kim IH, Mater. Lett., 59, 966 (2005)

[7] Dauscher A, Thomy A, Scherrer H, Thin Solid Films, 280(1-2), 61 (1996)

[8] Makala RS, Jagannadham K, Sales BC, J. Appl. Phys., 94, 3907 (2003)

[9] Noro H, Sato K, Kagechika H, J. Appl. Phys., 73, 1252 (1993)

[10] Boulouz A, Chakraborty S, Giani A, Delannoy FP, Boyer A, Schumann J, J. Appl. Phys., 89, 5009 (2001)

[11] Giani A, Boulouz A, Delannoy FP, Foucaran A, Boyer A, Mater. Sci. Eng. B, 6419 (1999)

[12] Cho S, Kim Y, DiVenere A, Wong GK, Ketterson JB, Meyer R, Appl. Phys. Lett., 75, 1401 (1999)

[13] Kim Y, Cho S, DiVenere A, Wong GK, Ketterson JB, Phys. Rev. B, 63, 155306 (2001)

[14] Kim DH, Lee GH, J. Kor. Inst. Surf. Eng., 38(1), 7 (2005)

[15] Kim DH, Lee GH, J. Kor. Vac. Soc., 14(4), 215 (2005)

[16] Bhandari CM, Rowe DM, in CRC Handbook of Thermoelectrics, ed. Rowe DM (CRC Press, New York, USA, 1995) p.43 (1995)