ZnS:Cu,Cl 형광체의 특성에 미치는 원자층 증착 초박막 HfO 2 의 영향

김민완; 한상도; 김형수; 김혁종; 김휴석; 김석환; 이상우; 최병호; Min-Wan Kim; Sand-Do Han; Hyung-Su Kim; Hyug-Jong Kim; Hyu-Suk Kim; Suk-Whan Kim; Sang-Woo Lee; Byung-Ho Choi

Korean Journal of Materials Research, Vol.16, No.4, 248-252, April, 2006

DOI10.3740/MRSK.2006.16.4.248 Export Citation

ZnS:Cu,Cl 형광체의 특성에 미치는 원자층 증착 초박막 HfO 2 의 영향

Effect of Ultrathin Film HfO 2 by Atomic Layer Deposition on the Propreties of ZnS:Cu,Cl Phosphors

김민완, 한상도 ¹, 김형수, 김혁종, 김휴석, 김석환 , 이상우 , 최병호 ^†

금오공과대학교 신소재시스템공학부
¹한국에너지기술연구원

Min-Wan Kim, Sand-Do Han¹, Hyung-Su Kim, Hyug-Jong Kim, Hyu-Suk Kim, Suk-Whan Kim , Sang-Woo Lee , and Byung-Ho Choi^†

School of Advanced Materials Engineering, Kumoh National Institute of Technology, Korea
¹Sensors and Advanced Materials Lab., Korea Institute of Energy Research, Taejon, Korea

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An investigation is reported on the coating of ZnS:Cu,Cl phosphors by HfO 2 using atomic layer deposition method. Hafnium oxide films were prepared at the chamber temperature of 280 ? C using Hf[N(CH 3 ) 2 ] 4 andO 2 as precursors and reactant gas, respectively. XPS and ICP-MS analysis showed the surface composition of coated phosphor powder was hafnium oxide. In FE-SEM analysis, the surface morphology of uncoated phosphors became smoother and clearer as the number of ALD cycle increased from 900 to 1800. The photoluminescence intensity for coated phosphors showed 7.3∼13.4 higher than that of uncoated. The effect means that the reactive surface is uniformly coated with stable hafnium oxide to reduce the dead surface layer without change of bulk properties and also its absorptance is almost negligible due to ultrathin(nano-scaled) films. The growth rate is about 1.1\AA/cycle .

Keywords:Atomic layer deposition;ZnS phosphor;Oxide coating;Photoluminescence;Electroluminescence

[References]

Dimitrova V, Tate J, Thin Solid Films, 365(1), 134 (2000)
Guo C, Chu B, Wu M, SU Q, Lumin J, 105, 121 (2003) (2003)
Kominami H, Nakamura T, Sowa K, Nakanishi Y, Hatanaka Y, Shinmaoka G, Appl. Surf. Sci., 113-114, 519 (1997)
Han SD, Singh I, Chang M, Shin D, Proc. of Int. Conf. on the Sci. and Tech. of Emissive Displays and Lighting, 20-23, 298 (2004)
Park W, Yasuda K, Wagner Bk, Yang HG, Us Patent No. 0119247, (2002) (2002)
Ibegazene H, Alperine S, Diot C, J. Mater. Sci., 30(4), 938 (1995)
Kim HS, Kim MW, Kim HS, Kim HJ, Sohn WK, Jeong BK, Kim SK, Lee SW, Choi BH, Korean J. of Mater. Research, 15(4), 275 (2005)
Sundqvist J, Barash A, Aarik J, Kukli K, Aidla A, Thin Soild Films, 417, 147 (2003)
Sneh O, Clark-Phelps RB, Londergan AR, Winkler J, Seidel TE, Thin Solid Films, 402(1-2), 248 (2002)
Lee YH, Kwak JC, Gang BS, Kim HC, Choi BH, Jeong BK, Park SH, Lee KH, J. Electrochem. Soc., 151(1), C52 (2004)

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[1] Dimitrova V, Tate J, Thin Solid Films, 365(1), 134 (2000)

[2] Guo C, Chu B, Wu M, SU Q, Lumin J, 105, 121 (2003) (2003)

[3] Kominami H, Nakamura T, Sowa K, Nakanishi Y, Hatanaka Y, Shinmaoka G, Appl. Surf. Sci., 113-114, 519 (1997)

[4] Han SD, Singh I, Chang M, Shin D, Proc. of Int. Conf. on the Sci. and Tech. of Emissive Displays and Lighting, 20-23, 298 (2004)

[5] Park W, Yasuda K, Wagner Bk, Yang HG, Us Patent No. 0119247, (2002) (2002)

[6] Ibegazene H, Alperine S, Diot C, J. Mater. Sci., 30(4), 938 (1995)

[7] Kim HS, Kim MW, Kim HS, Kim HJ, Sohn WK, Jeong BK, Kim SK, Lee SW, Choi BH, Korean J. of Mater. Research, 15(4), 275 (2005)

[8] Sundqvist J, Barash A, Aarik J, Kukli K, Aidla A, Thin Soild Films, 417, 147 (2003)

[9] Sneh O, Clark-Phelps RB, Londergan AR, Winkler J, Seidel TE, Thin Solid Films, 402(1-2), 248 (2002)

[10] Lee YH, Kwak JC, Gang BS, Kim HC, Choi BH, Jeong BK, Park SH, Lee KH, J. Electrochem. Soc., 151(1), C52 (2004)