Ga 첨가량이 (Zn,Mg)O 투명전극 막의 전기적, 결정학적 특성에 미치는 영향

서광종; 와카하라 아키히로; 요시다 아키라; Kwang Jong Suh; Akihiro Wkahara; Akira Yoshida

Korean Journal of Materials Research, Vol.15, No.8, 491-495, August, 2005

DOI10.3740/MRSK.2005.15.8.491 Export Citation

Ga 첨가량이 (Zn,Mg)O 투명전극 막의 전기적, 결정학적 특성에 미치는 영향

Effect of Ga Addition on the Electrical and Structural Properties of (Zn,Mg)O Transparent Electrode Films

서광종^†, 와카하라 아키히로, 요시다 아키라

도요하시기술과학대학교 전기전자공학과

Kwang Jong Suh^†, Akihiro Wkahara, and Akira Yoshida

Department of Electrical and Electronics Engineering, Toyohashi University of Technology, Toyohashi 441-8580, Japan, Korea

E-mail:

(Zn,Mg)O (ZMO) thin films doped with Ga (0\~0.03mol%) in the target source were prepared by pulsed laser deposition on c-plane sapphire substrates at 500 ? C , and the effect of Ga contents on the properties of the electrical, optical and crystal properties of the deposited films was investigated. From X-ray diffraction patterns, ZMO film doped with 0.02mol% Ga showed crystal structure with c-axis preferred orientation, showing only the (0002) and (0004) diffraction peaks. In contrast, ZMO film doped with Ga=0.03mol% showed a randomly oriented crystal structure. All the samples were highly transparent, showing the transmittance values of above 85% in the visible region. For all the Ga doped ZMO films, the value of energy band gap was found to be about 3.5 eV, regardless of their Ga contents. From the Hall measurements, the resistivity and the carrier density for the ZMO film doped with 0.01mol% Ga were about 5×10 ?4 Ω?cm and 2×10 21 cm ?3 , respectively.

Keywords:ZnMgO;Ga addition;electrical properties;transparent electrode film

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[1] Thomas DG, J. Phys. Chem. Solids, 15, 86 (1960)

[2] Park YS, Litton CW, Collins TC, Reynolds DC, Phys Rev., 143, 512 (1966)

[3] Tang ZK, Yu P, Wong GKL, Kawasaki M, Ohtomo A, Koinuma H, Segawa Y, Solid State Commun., 103, 459 (1997)

[4] Chen Y, Bangnail DM, Koh H, Park K, Hiraga K, Zhu Z, Yao T, J. Appl. Phys., 84, 3912 (1998)

[5] Reynolds DC, Look DC, Jogai B, Litton CW, Cantwell G, Harsch WC, Phys. Rev. B, 60, 753 (1999)

[6] Bagnail DM, Chen YR, Zhu Z, Yao T, Koyama S, Shen MY, Goto T, Appl. Phys. Lett., 70, 2230 (1997)

[7] Suh JJ, J. Microelectronic & Packaging Soc., 12(1), 73 (2005)

[8] Park WI, An S, Yi G, Jang HM, J. Mater. Res., 16, 1358 (2001)

[9] Craciun V, Elders J, Gardeniers JGE, Boyd IW, Appl. Phys. Lett., 65, 2963 (1994)

[10] Omata T, Ueda N, Ueda K, Kawazoe U, Appl. Phys. Lett., 64, 1077 (1994)

[11] Ohtomo A, Kawasaki M, Koida T, Appl. Phys. Lett., 72, 2466 (1998)

[12] Katouda R, Semiconductor Evaluation Technology, Sangyotosyo p. 168 (1989) (1989)

[13] Jiles D, Introduction to the Electronic Preoperties of Materials, Chapman & Hall Publishing, p. 13 (1995) (1995)