펄스 레이저 증착법에 의한 ZnO:Li 박막 성장과 열처리 효과

홍광준; Kwangjoon Hong

Korean Journal of Materials Research, Vol.15, No.5, 293-300, May, 2005

DOI10.3740/MRSK.2005.15.5.293 Export Citation

펄스 레이저 증착법에 의한 ZnO:Li 박막 성장과 열처리 효과

Effect of Thermal Annealing and Growth of ZnO:Li Thin Film by Pulesd Laser Deposition

홍광준^†

조선대학교 물리학과

Kwangjoon Hong^†

Department of Physics, Chosun University, Kwangju 501-759, Korea

E-mail:

ZnO:Li epilayers were synthesized on sapphire substrates by the pulesd laser deposition (PLD) after the surface of the ZnO:Li sintered pellet was irradiated by the ArF (193 nm) excimer laser. The growth temperature was fixed at 400 ? C . The crystalline structure of epilayers was investigated by the photoluminescence (PL) and double crystal X-ray diffraction (DCXD). The carrier density and mobility of epilayers measured by van der Pauw-Hall method are 2.69×10cm ?3 and 52.137cm 2 /V?s at 293 K, respectively. The temperature dependence of the energy band gap of epilayers obtained from the absorption spectra is well described by the Varshni's relation, E g (T)=3.5128eV?(9.51×10 ?4 eV/K)T 2 /(T+280K) . After the as-grown ZnO:Li epilayer was annealed in Zn atmospheres, oxygen and vaccum the origin of point defects of ZnO:Li has been investigated by PL at 10 K. The Peaks of native defects of V zn ,V o ,Zn int ,andO int showned on PL spectrum are classified as a donors or accepters type. We confirm that ZnO:Li/Al 2 O 3 in vacuum do not form the native defects because ZnO:Li epilayers in vacuum existe in the form of stable bonds.

Keywords:ZnO:Li epilayers;pulesd laser deposition;annealing;Hall effect point defect;photoluminescence

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[4] Kondo KM, Ikeda CT, Kasqunami T, Jpn. J. Appl. Phys. Suppl., 29(1), 159 (1990)

[5] Wu MS, Azuma A, Kawabata N, J. Appl. Phys., 62(6), 2482 (1987)

[6] Mitsuyu T, Ono S, Wasa K, J. Appl. Phys., 44, 1061 (1973)

[7] Nakata Y, Okada T, Maeda M, Appl. Surf. Sci., 197-198, 368 (2002)

[8] Takada S, J. Appl. Phys., 73, 4739 (1973)

[9] Ambia MG, Islam MN, Hakim MO, Solar Energy Materials and Solar Cells, 28, 103 (1992)

[10] Labeau M, Rey P, Joubert JC, Delabouglise A, G, 213, 94 (1992)

[11] Tammenmaa M, Niinisto L, J. Crystal Growth, 216, 326 (2000)

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[13] Fujita H, J. Phys. Soc., 20, 109 (1965)

[14] Varshni YP, Physica, 34, 149 (1967)

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[18] Halsted RE, Aven M, Phys. Rev. Lett., 14(64), 2034 (1965)