화학공학소재연구정보센터
홈 로그인 로그아웃 연락처 사이트맵
Korean Journal of Materials Research, Vol.15, No.4, 275-280, April, 2005
DOI10.3740/MRSK.2005.15.4.275  Export Citation
원자층 증착법으로 성장한 HfO 2 박막의 제조
Preparation of Hafnium Oxide Thin Films grown by Atomic Layer Deposition
김희철, 김민완, 김형수, 김혁종, 손우근, 정봉교1, 김석환, 이상우, 최병호†
  • 금오공과대학교 신소재시스템공학부
  • 1LG. Philips Displays 설계실
Hie-Chul Kim, Min-Wan Kim, Hyung-Su Kim, Hyug-Jong Kim, Woo-Keun Sohn, Bong-Kyo Jeong1, Suk-Whan Kim, Sang-Woo Lee, and Byung-Ho Choi†
  • School of Advanced Materials and Systems Engineering, Kumoh National Institute of Technology, Gumi 730-701, Korea
  • 1Design Department, LG. Philips Displays, Gumi 730-030, Korea
E-mail:
The growth of hafnium oxide thin films by atomic layer deposition was investigated in the temperature range of [Math Processing Error] using [Math Processing Error] as precursors. A self-limiting growth of [Math Processing Error] was achieved at the substrate temperature of [Math Processing Error] . The films were amorphous and very smooth (0.76-0.80 nm) as examined by X-ray diffractometer and atomic force microscopy, respectively. X-ray photoelectron spectroscopy analysis showed that the films grown at [Math Processing Error] was almost stoichiometric. Electrical measurements performed on [Math Processing Error] (20 nm)/Si MOS structures exhibited high dielectric constant [Math Processing Error] and a remarkably low leakage current density of at an applied field of [Math Processing Error] MV/cm, probably due to the stoichiometry of the films.\\"315\\" height=\\"672\\" /> "??
Keywords:ALD(Atomic Layer Deposion);hafnium oxide;dielectric constant
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