유기반도체 트랜지스터의 유전체 표면처리 효과

임상철; 김성현; 이정헌; 구찬회; 김도진; 정태형; Sang Chul Lim; Seong Hyun Kim; Jung Hun Lee; Chan Hoe Ku; Dojin Kim; Taehyong Zyung

Korean Journal of Materials Research, Vol.15, No.3, 202-208, March, 2005

DOI10.3740/MRSK.2005.15.3.202 Export Citation

유기반도체 트랜지스터의 유전체 표면처리 효과

Dielectric Surface Treatment Effects on Organic Thin-film Transistors

임상철^{1, 2}, 김성현^{1, †}, 이정헌^{1, 3}, 구찬회^{1, 3}, 김도진 ², 정태형⁴

¹한국전자통신연구원 미래기술연구본부, Yuseong-gu, Daejeon 305-764, Korea
²충남대학교 재료공학과
³경희대학교 디스플레이공학과
⁴한국전자통신연구원 미래기술연구본부

Sang Chul Lim^{1, 2}, Seong Hyun Kim^{1, †}, Jung Hun Lee^{1, 3}, Chan Hoe Ku^{1, 3}, Dojin Kim⁴, and Taehyong Zyung¹

¹Electronics and Telocommunications Research Institute, Gajeong-dong, Yuseong-gu, Daejeon 305-350, Korea
²Department of Materials Science and Engineering, Chungnam National University
³Information Display Department, Kyung Hee University, Hoegi-dong, Dongdaemun-gu, Seoul 130-701
⁴Department of Materials Science and Engineering, Chungnam National University, Yuseong-gu, Daejeon 305-764, Korea

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The surface states of gate dielectrics affect device performance severely in Pentacene OTFTs. We have fabricated organic thin-film transistors (OTFTs) using pentacene as an active layer with chemically modified SiO 2 gate dielectrics. The effects of the surface treatment of SiO 2 on the electric characteristics of OTFTS were investigated. The surface of SiO 2 gate dielectric was treated by normal wet cleaning process, O 2 ?plasma treatment, hexamethyldisilazane (HMDS), and octadecyltrichlorosilane (OTS) treatment. After the surface treatments, the contact angles and surface free energies were measured in order to analyze the surface state changes. In the electrical measurements, typical I-V characteristics of TFTs were observed. The field effect mobility, μ , was calculated to be 0.29cm 2 V ?1 s ?1 for OTS treated sample while those for the HMDS, O 2 plasma treated, and wet-cleaned samples were 0.16, 0.1, and 0.04cm 2 V ?1 s ?1 , respectively.

Keywords:Organic thin film transistors;HMDS;OTS;semiconductors

[References]

Klauk H, Gundlach DJ, Nicoles JA, Sheraw CD, Bonse M, Jackson TN, Solid State Technol., 43, 63 (2000)
Shtein M, Mapel J, Benziger JB, Forrest SR, Appl. Phys. Lett., 81, 268 (2002)
Knipp D, Street RA, Krusor B, Volkel A, Ho J, J. Appl. Phys., 93, 347 (2003)
Salleo A, Chabinyc ML, Yang MS, Street RA, Appl. Phys., 81, 23 (2002)
Brown AR, Jarret CP, De Leeuw DM, Matters M, 'Field-effect transistors made from solution processed organic semiconductors' Synth. Met., 88, 37 (1997) (1997)
Lin Y, Gundlach DJ, Nelson SF, Jackson TN, IEEE Elect. Dev. Lett., 18, 606 (1997)
Dimitrakopoulos CD, Brown AR, Pomp A, J. Appl. Phys., 80, 2501 (1996)
Tredgold RH, Order in Thin Organic Films, Cambridge University Press, (1994) (1994)
Ulman A, An Introduction to Ultrathin Organic Films: From Langmuir-Blodgett to Self-Assembly, Academic press, New York, (1991) (1991)
Young T, Philos. R. Soc. Lond., 95, 65 (1805)
Fowkes FM, Ind. and Eng. Chem., 56, 40 (1964)
Owens DK, Wendt RC, J. Appl. Polym. Sci., 13, 1741 (1969)
Kaelble DH, J. Adhes., 2, 50 (1970)
Wu S, J. Polym. Sci, 34, 19 (1971)
Gould (Ed.) RF, Contact Angle, Wettability and Adhesion, Proceeding of the 144th Meeting of the American Chemical Society, Vol 43, Washington D. C. (1964) (1964)
Good RJ, Contact angle wetting and adhesion: A critical review, in: K. L. Mimal (Ed.), Contact angle, Wettability and Adhesion, USP, The Netherlands, 3-36 (1993) (1993)
Klauk H, Gundlach DJ, Nichols JA, Sheraw CD, Bonse M, Jackson TN, Solid State Technol., 43, 63 (2000)
Ma KX, Ho CH, Zhu FR, Chung TS, Thin Solid Films, 371(1-2), 140 (2000)
Lu D, Wu Y, Guo J, Lu G, Wang Y, Shen J, Mater. Sci. Eng., 97, 141 (2003)
Li X, Horita K, Carbon, 38, 133 (2000)
Nakahara M, Ozawa K, Sanada Y, J. Mater. Sci., 29(6), 1646 (1994)

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