중수소 프라즈마 처리가 다결정 실리콘 TFT의 안정성에 미치는 영향에 관한 연구

손송호; 배성찬; 김동환; Song Ho Sohn; SC Bae; Donghwan Kim

Korean Journal of Materials Research, Vol.14, No.7, 516-521, July, 2004

DOI10.3740/MRSK.2004.14.7.516 Export Citation

중수소 프라즈마 처리가 다결정 실리콘 TFT의 안정성에 미치는 영향에 관한 연구

A Study on the Effect of Plasma Deuterium Treatment on Reliability of Poly-Silicon Thin Film Transistors

손송호^†, 배성찬¹, 김동환

고려대학교 신소재공학과
¹경북대학교 전자공학과

Song Ho Sohn^†, SC Bae¹, and Donghwan Kim

Department of Materials Science and Engineering, Korea University, Anam-Dong, Sungbuk-Ku, Seoul 136-701, Korea
¹School of Electronic and Elctrical Engineering, Kyungpook National University, Taegu, Korea

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We applied a deuterium plasma treatment to the surface of polycrystalline silicon films using PECVD and observed the change with AFM, XRD, ET-IR, and SIMS measurement. A bias temperature stressing (BTS) test was carried out to evaluate the reliability of the thin-film transistors (TFT). TFTs with channel lengths as small as 2 μm were electrically stressed fer up to 1000 sec at room temperature. From the parameter variation such as s-factor, leakage current and on/off ratio, we suggest that the deuterium plasma treatment suppress the hot carrier effect and improve the stability of TFTs.

Keywords:hot electron degradation;deuterium;reliability;TFT

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[Related Articles]

[1] Kizilyalli, Lyding LC, Hess JW, IEEE Device Research Conference, 14 (1996)

[2] Tung YJ, Boyce J, Ho J, Huang X, King TJ, IEEE Electron Device Lett, 20(8), 387 (1999)

[3] Choi YJ, Kwak WK, Yoon SY, Kim CO, Jang J, Tech. Pap. Digest, SID, 508 (1999)

[4] Kim KS, Master's Thesis, Korea University, (2003) (2003)

[5] Lombardi C, Manzini S, Saporito A, Vanzi M, IEEE Electron Device Lett, 11, 1164 (1988)

[6] Shih A, Yeh SH, Lee SC, J. Appl. Phys, 89(10), 5355 (2001)

[7] Zhou Y, XU G, International conference of characterization metrology for ULSI technology(Hillsboro, USA), (2003) (2003)

[8] Cheng K, Lee J, Lyding JW, Appl. Phys, 77, 2358 (2000)

[9] Lee JW, Lee NI, Han CH, IEEE Electron Device Lett., 20, 12 (1999)

[10] Acovic A, Microelectron, 36(7/8), 845 (1996)

[11] Noguchi T, Jpn. J. Appl. Phys, 232, 1584 (1993)