Si 태양전지에서 SiO 2 광반사 방지막의 처리 효과

장지근; 임용규; 황용운; 조재욱; Gee-Keun Chang; Yong-Keu Lim; Yong-Woon Hwang; Jae-Uk Cho

Korean Journal of Materials Research, Vol.14, No.2, 152-156, February, 2004

DOI10.3740/MRSK.2004.14.2.152 Export Citation

Si 태양전지에서 SiO 2 광반사 방지막의 처리 효과

Effect of SiO 2 Antireflection Coating on the Si Solar Cell

장지근^†, 임용규, 황용운, 조재욱

단국대학교 전자컴퓨터학부

Gee-Keun Chang^†, Yong-Keu Lim, Yong-Woon Hwang, and Jae-Uk Cho

Division of Electronics and Computer Science, Dankook University, Cheonan, Chungnam 330-714, Korea

E-mail:

We have studied the effective optical absorption power of Si solar cell with SiO 2 -antireflection layer based on a mathematical modelling of AM(air mass)1 spectrum and Si refractive index in the wavelength range(0.4 μm≤ λ ≤ 0.97μm ). The effective optical absorption power obtained from the theoretical calculation was 450 and 520 W/ \m 2 for the Si solar cells with SiO 2 -antireflection layer of 500 \AA and 1000 \AA , respectively. The optimum thickness of SiO 2 -antireflection layer showing the minimum reflection loss was about 1000 \AA in the computer simulation. Two kinds of Si solar cells named EBS(500 \AA ) and EBS(l000 \AA ) were fabricated to evaluate the effect of SiO 2 -antireflection layer thickness on the optical absorption. The epitaxial base Si cell with SiO 2 -antireflection layer of 1000 \AA [EBS(l000 \AA )] showed the output power improvement of about 15% upon the EBS(500 \AA ) cell due to larger absorption of effective optical power under illumination of AM1, 1 sun.

Keywords:antireflection;solar cell;effective optical absorption power;efficiency

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[1] Green MA, Zhao J, Wenham SR, IEEE Electron Devices, 13(6), 317 (1992)

[2] Dhariwal SR, Solid State Electronics, 24(12), 1162 (1981)

[3] Sinton RA, Kwark Y, Gan JY, Swanson RM, IEEE Trans. Electron Devices, EDL-7, 567 (1986)

[4] Sze SM, Physics of Semiconductor Devices, 2nd ed., p.798, John Wiley & Sons, Inc., (1981) (1981)

[5] Yang ES, Microelectronic Devices, p. 359, Me GrawHill Book Company, (1988) (1988)

[6] Arndt RA, Allison JF, Haynos JG, Meulenberg A Jr., Conf. Rec. 11th IEEE Photovoltaic Spec. Conf., (IEEE, New York, 1975) p. 40 (1975)

[7] Iles PA, J. Vac. Sci. Technol., 14(5), 1100 (1977)

[8] Williams R, J. Vac. Sci. Technol., 14(5), 1106 (1977)

[9] Chang GK, Lim YK, Jeong JC, J. of the Microelectronics & Packaging Soc., 10(2), 33 (2003)

[10] Hovel HJ, Semiconductors and Semimetals, p. 203, Academic Press, (1975) (1975)

[11] Drummeter LF, Jr, Hass G, Physics of Thin Films Advanced in Research and Development, Ind ed., p. 242, Academic Press (1964) (1964)

[12] Aspnes DE, Properties of Silicon, p. 72, INSPEC, The Institution of Electrical Eng., London and New York, (1988) (1988)