AlxGal-xN/GaN 에피층의 비정상적인 광발광과 Persistent Photoconductivity 현상

정상조; 전용기; S.J. Chung; Y.K. Jun

Korean Journal of Materials Research, Vol.13, No.10, 673-676, October, 2003

DOI10.3740/MRSK.2003.13.10.673 Export Citation

AlxGal-xN/GaN 에피층의 비정상적인 광발광과 Persistent Photoconductivity 현상

Anomalous Photoluminescence and Persistent Photoconductivity of AlxGal-xN/GaN Epilayers

정상조^†, 전용기¹

전북대학교 반도체물성연구소
¹호원대학교 교양과

S.J. Chung^†, and Y.K. Jun¹

Semiconductor Physics Research Center, Chunbuk National University, Chongju 561-756, Korea
¹Department of liberal Art and Science, Howon University, Kunsan 573-718, Korea

E-mail:

We have investigated N/GaN epilayers (x = 0.08, 0.15) grown by metal organic vapor phase epitaxy on sapphire with photoluminescence(PL), and persistent photoconductivity(PPC) experiments. An anomalous S-shaped shift behavior of temperature dependencies of PL peak energy is observed for the x = 0.15 sample. In PPC measurement, showed that the dark current recovery time of N/GaN epilayers mainly depends on the Al content. These behaviors are usually attributed to the presence of carrier localization states. All these phenomena are explained based on the alloy compositional fluctuations in the / N/ epilayers. The photocurrent quenching observed in PPC measurements for N/ epilayers less than 0.2 thickness indicates that the presence of metastable state in the bandgap of GaN layer, and that the excess holes in the valence band recombine with free electrons.

Keywords:Persistent photoconductivity;Alloy potential fluctuation;Photocurrent quenching

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[2] Akasaki I, Amano H, Koide Y, Hiramatsu K, Sawaki N, J. Cryst. Growth, 98, 209 (1989)

[3] Nakamura S, Mukai T, Senoh M, Appl. Phys. Lett., 64, 1687 (1994)

[4] Nakamura S, Senoh M, Nagahama S, Iwasa N, Yamada T, Kiyoku TH, Sugimoto Y, Kozaki T, Umemoto H, Sano M, Chocho K, Appl. Phys. Lett., 72, 1687 (1998)

[5] Mukai T, Narimatsu H, Nakamura S, Jpn. J. Appl. Phys., 37, L479 (1998)

[6] Khan M, Kusnia JN, Olson DT, Van Hove GM, Blasingane M, Reitz LF, Appl. Phys. Lett., 60, 2917 (1992)

[7] Walker D, Zhang X, Kung P, Saxler A, Javadpour S, Xu J, Razeghi M, Appl. Phys. Lett., 68, 2100 (1996)

[8] Ito K, Hiramatsu K, Amano H, Akasaki I, J. Cryst. Growth, 104, 533 (1989)

[9] Varshni YP, Physica., 34, 149 (1967)

[10] Driessen FAJM, Bauhuis GJ, Olsthoorn SM, Giling LJ, Phys. Rev. B, 48, 7889 (1993)

[11] Yamashita K, Kita T, Nakayama H, Nishino T, Rev. B, 55, 4411 (1997)

[12] Yamamoto T, Kasu M, Noda S, Sasaki A, J. Appl. Phys., 68, 5318 (1990)

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[16] Matsuoka T, MRS Internet J. Nitride Semicond. Res., 1, 11 (1996)

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[18] Kim HS, Mair R, Lin J, Jiang H, J. Korean, Phys. Soc., 37, 391 (2000)

[19] Chen HM, Chen YF, Lee MC, Feng MS, Phys. Rev. B, 56, 6942 (1997)

[20] Chung SJ, Jeong MS, Cha OH, Hong CH, Suh EK, Lee HJ, Kim YS, Kim BH, Appl. Phys. Lett., 76, 1021 (2000)