PECVD로 제조된 비정질 질화탄소 박막의 물성에 미치는 열처리 효과

문형모; 김상섭; Hyung Mo Moon; Sang Sub Kim

Korean Journal of Materials Research, Vol.13, No.5, 303-308, May, 2003

DOI10.3740/MRSK.2003.13.5.303 Export Citation

PECVD로 제조된 비정질 질화탄소 박막의 물성에 미치는 열처리 효과

Effects of Thermal Annealing on the Properties of Amorphous Carbon Nitride Films Deposited by PECVD

문형모, 김상섭^{1, †}

순천대학교 재료ㆍ금속공학과
¹전남대학교 신소재공학부 광ㆍ전자박막연구실

Hyung Mo Moon, and Sang Sub Kim^{1, †}

Dept. of Materials Science and Metallurgical Engineering, Sunchon National University, Korea
¹Photonic and Electronic Thin Film Laboratory, Dept. of Materials Science and Engineering, Chonnam National University, Korea

E-mail:

Amorphous carbon nitride films deposited on Si(001) substrates by a plasma enhanced chemical vapor deposition (PECVD) technique using CH 4 and N 2 as reaction gases were thermally annealed at various temperatures under N 2 atmosphere, then their physical properties were investigated particularly as a function of annealing temperature. Above 600 ? C a small amount of crystalline β - C 3 N 4 phase evolves, while the film surface becomes very rough due to agglomeration of fine grains on the surface. As the annealing temperature increases, both the hardness and the sp 3 bonding nature are enhanced. In contrast to our expectation, higher annealing temperature results in a relatively higher friction mainly due to big increase in roughness at that temperature.

Keywords:carbon nitride film;PECVD;amorphous film;thermal annealing;tribology

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[2] Alvarez F, Victoria NM, Hammer P, Appl. Phys. Lett., 73, 1065 (1998)

[3] Chen LC, Chen CK, Wei SL, Appl. Phys. Lett., 72, 3449 (1998)

[4] Lu YF, He ZF, Ren ZM, J. Appl. Phys., 86, 5417 (1999)

[5] Bhattacharyya S, Granier A, Turban G, J. Appl. Phys., 86, 4668 (1999)

[6] Zhao XA, Ong CW, Tsang YC, Wong YW, Chan PW, Choy CL, Appl. Phys. Lett., 66, 2562 (1995)

[7] Friedrich M, Welzei T, Rochotzki R, Kupfer H, Diamond Relat. Mater., 6, 33 (1997)

[8] Hellgren N, Johansson MP, Broitman E, Sundgren JE, Phys. Rev., 5162 (1999)

[9] Niu C, Lu YZ, Lieber CM, Science, 261, 334 (1999)

[10] Aoi Y, Ono K, Kamijo E, J. Appl. Phys., 86, 2318 (1999)

[11] Zhang ZJ, Fan S, Huang J, Lieber CM, Appl. Phys. Lett., 68, 2639 (1996)

[12] Jama C, Rousseau V, Dessaux O, Goudmand P, Thin Solid Films, 302(1-2), 58 (1997)

[13] Merel P, Harman J, Appl. Phys. Lett., 71, 3814 (1997)

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[15] He JL, Chang WL, Surf. Coat. Technol., 99, 184 (1998)

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[17] Mutsukura N, Akita K, Diamond Relat. Mater., 8, 1720 (1999)

[18] Moon HM, Kim SS, K. J. Mater. Res., in press

[19] Matsumoto S, Xie EQ, Izumi F, Diamond Relat. Mater., 8, 1175 (1999)

[20] Lim SF, Wee ATS, Lin J, Chua DHC, Surf. Interface Anal., 28, 212 (1999)

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[22] Muhl S, Mendez JM, Diamond Relat. Mater., 8, 1809 (1999)

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[24] Chen ZY, Zhao JP, Yano T, Ooie T, Yoneda M, Sakakibara J, J. Appl. Phys., 88, 7060 (2000)

[25] Wei J, Hing P, Mo ZQ, Wear, 225-229, 1141 (1999)