졸-겔 법으로 성장시킨 Nb가 첨가된 Bi 4 Ti 3 O 12 박막의 미세구조와 전기적 성질

김상수; 장기완; 한창희; 이호섭; 김원정; 최은경; 박문흠; Sang Su Kim; Ki Wan Jang; Chang Hee Han; Ho Sueb Lee; Won Jeong Kim; Eun Kyung Choi; Mun Heum Park

Korean Journal of Materials Research, Vol.13, No.5, 317-322, May, 2003

DOI10.3740/MRSK.2003.13.5.317 Export Citation

졸-겔 법으로 성장시킨 Nb가 첨가된 Bi 4 Ti 3 O 12 박막의 미세구조와 전기적 성질

Microstructures and Electrical Properties of Niobium-doped Bi 4 Ti 3 O 12 Thin Films Fabricated by a Sol-gel Route `

김상수^†, 장기완, 한창희, 이호섭, 김원정, 최은경, 박문흠

창원대학교 자연과학대학 물리학과

Sang Su Kim^†, Ki Wan Jang, Chang Hee Han, Ho Sueb Lee, Won Jeong Kim, Eun Kyung Choi, and Mun Heum Park

Department of Physics, Changwon National University, Changwon, Kyungnam 641-773, Korea

E-mail:

Bismuth layered structure ferroelectric thin films, Bi 4 Ti 3 O 12 / (BTO) and Nb-doped BTO (BTN) were prepared on the Pt(111)/Ti/ SiO 2 /Si(100) substrates by a sol-gel route. We investigated the Nb-doping effect on the grain orientation and ferroelectric properties. Nb 5+ ion substitution for Ti 4+ ion in perovskite layers of BTO decreased the degree of c-axis orientation and increased the remanent polarization (2Pr). The fatigue resistance of Nb-doped BTO thin film was shown to be superior to that of BTO, and the leakage current of Nb-doped BTO thin film was decreased about 1 order of magnitude compared with BTO. The improvement of ferroelectric properties with Nb 5+ doping in BTO could be attributed to the changes in space charge densities and grain orientation in the thin film.

Keywords:Bi 4 Ti 3 O 12 thin film;sol-gel;orientation;ferroelectric properties

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