통계적 실험 방법을 이용한 티타늄실리사이드의 열적안정성 연구

정성희; 송오성; Seong Hwee Cheong; Oh Sung Song

Korean Journal of Materials Research, Vol.13, No.3, 200-204, March, 2003

DOI10.3740/MRSK.2003.13.3.200 Export Citation

통계적 실험 방법을 이용한 티타늄실리사이드의 열적안정성 연구

Characterizing the Thermal Stability of TiSi 2 Film by Using the Statistical Experimental Method

정성희^†, 송오성

서울시립대학교 신소재공학과

Seong Hwee Cheong^†, and Oh Sung Song

Department of Materials Science and Engineering, The University of Seoul, 90 Cheonnong-dong, Tongdaemun-gu, 130-743, Seoul, Korea

E-mail:

A statistical experiment method was employed to investigate the window of the thermal stability of TiSi 2 films which are popular for Ti-salicide and ohmic layers. The statistical experimental results showed that the first order term of TiSi 2 thickness and annealing temperature was acceptable as a function of Δ resistivity by 95% reliability criteria, and R-sq value implying a fit accuracy of the model also showed a high value of 93.80%. We found that Δ resistivity of the TiSi 2 film annealed at 700 ? C for 1 hr changed from 3.35 to 0.379μ Ω ? cm with increasing thickness from 185 to 703\AA , and TEX>Δ resistivity of the TiSi 2 film with a fixed thickness of 444 \AA changed from 0.074 to 17.12 μ Ω ? cm with increasing temperature increase from 600 to 800 ? C . From these results, we report that the process conditions of 692 ? C -1 hr, 715 ? C -1 hr, and 73 0 ? C -1 hr for TiSi 2 ( 400\AA ) are stable by the criteria of 1, 2, and 3 μ Ω ? cm of Δ resistivity, respectively.

Keywords:Ti deposition;statistics experiment design;resistivity;resistivity;agglomeration

[References]

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Prokop J, Zybill CE, Veprek S, Thin Solid Films, 359(1), 39 (2000)
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Hong F, Rozgonyi GA, Patnaik BK, Appl. Phys. Lett., 61, 1519 (1992)
Hong F, Rozgonyi GA, J. Electrochem. Soc., 141(12), 3480 (1994)
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Lutze J, Scott G, Manley M, IEEE Electron Device Lett., 21, 155 (2000)
Fang H, Ozturk MC, Seebauer EG, Batchelor DE, J. Electrochem. Soc., 146(11), 4240 (1999)
Bucher CG, Bourgund U, Structural Safety, 7, 57 (1990)
Langner AH, Loredo EN, Montgomery DC, Griffin AH, Robotics and Computer Integrated Manufacturing, 16, 377 (2000)

[Related Articles]

[1] Dai JY, Guo ZR, Tee SF, Tay CL, Er E, Redkar S, Appl. Phys. Lett., 78, 3091 (2001)

[2] Prokop J, Zybill CE, Veprek S, Thin Solid Films, 359(1), 39 (2000)

[3] Detavernier C, Meirhaeghe RLV, Cardon F, J. Appl. Phys., 88, 133 (2000)

[4] Osburn CM, Tsai JY, Sun J, J. Electron Material, 25, 1725 (1996)

[5] Chen J, Colinge JP, Flandre D, Gillon R, Raskin JP, Vanhoenacker D, J. Electrochem. Soc., 144(7) (1997)

[6] Sun JJ, Tsai JY, Osburn CM, IEEE Trans. Electron Devices, 45(9), 1946 (1998)

[7] Hong F, Rozgonyi GA, Patnaik BK, Appl. Phys. Lett., 61, 1519 (1992)

[8] Hong F, Rozgonyi GA, J. Electrochem. Soc., 141(12), 3480 (1994)

[9] Kang CY, Kang DG, Lee JW, J. Appl. Phys., 86, 5293 (1999)

[10] Lutze J, Scott G, Manley M, IEEE Electron Device Lett., 21, 155 (2000)

[11] Fang H, Ozturk MC, Seebauer EG, Batchelor DE, J. Electrochem. Soc., 146(11), 4240 (1999)

[12] Bucher CG, Bourgund U, Structural Safety, 7, 57 (1990)

[13] Langner AH, Loredo EN, Montgomery DC, Griffin AH, Robotics and Computer Integrated Manufacturing, 16, 377 (2000)